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SiHF710 Datasheet(PDF) 4 Page - Vishay Siliconix |
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SiHF710 Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com Document Number: 91041 4 S11-0508-Rev. B, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF710, SiHF710 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 400 300 200 0 100 100 101 VDS, Drain-to-Source Voltage (V) C iss C rss C oss V GS = 0 V, f = 1 MHz C iss = Cgs + Cgd, Cds Shorted C rss = Cgd C oss = Cds + Cgd 91041_05 QG, Total Gate Charge (nC) 20 16 12 8 0 4 0 4 12 10 8 6 V DS = 80 V V DS = 200 V For test circuit see figure 13 V DS = 320 V 91041_06 I D = 2.0 A 2 10-1 100 VSD, Source-to-Drain Voltage (V) 0.4 1.2 1.0 0.8 0.6 25 °C 150 °C V GS = 0 V 91041_07 1.4 100 µs 1 ms 10 ms Operation in this area limited by R DS(on) VDS, Drain-to-Source Voltage (V) T C = 25 °C T J = 150 °C Single Pulse 102 2 5 0.1 1 2 5 10 2 5 25 1 25 10 25 102 103 91041_08 |
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