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UPC2709T Datasheet(PDF) 1 Page - NEC

Part No. UPC2709T
Description  2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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UPC2709T Datasheet(HTML) 1 Page - NEC

   
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UPC2709T
UPC2712T
2.5 GHz SILICON MMIC
WIDE-BAND AMPLIFIER
FEATURES
• WIDE FREQUENCY RESPONSE: 2.5 GHz
• HIGH GAIN: 23 dB (UPC2709T)
• SATURATED OUTPUT POWER:
+11.5 dBm (UPC2709T)
• INTERNAL CURRENT REGULATION MINIMIZES GAIN
CHANGE OVER TEMPERATURE
• 5 V SINGLE SUPPLY VOLTAGE
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
GAIN vs. FREQUENCY
UPC2709
UPC2712
0
0.5
1.0
1.5
2.0
2.5
3.0
30
25
20
15
10
Frequency, f (GHz)
PART NUMBER
UPC2709T
UPC2712T
PACKAGE OUTLINE
T06
T06
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
MIN
TYP
MAX
MIN
TYP
MAX
ICC
Circuit Current (no signal)
mA
19
25
32
9
12
15
GS
Small Signal Gain
dB
21
23
26.5
18
20
23.5
fU
Upper Limit Operating Frequency
(The gain at fU is 3 dB down from the gain at 0.1 GHz)
GHz
2.0
2.3
2.2
2.6
∆GS
Gain Flatness, f = 0.1 ~ 1.8 GHz
dB
±1.0
f = 0.1 ~ 2.0 GHz
±0.8
PSAT
Saturated Output Power
dBm
9
11.5
0
3
P1dB
Output Power at 1 dB Compression Point
dBm
7.5
-2.5
NF
Noise Figure
dB
5
6.5
4.5
6
RLIN
Input Return Loss
dB
7
10
9
12
RLOUT
Output Return Loss
dB
7
10
10
13
ISOL
Isolation
dB
26
31
28
33
∆GT
Gain -Temperature Coefficient
dB/
°C
-0.002
-0.003
RTH
Thermal Resistance (Junction to Ambient)
°C/W
200
200
ELECTRICAL CHARACTERISTICS (TA = 25°C, f = 1 GHz, VCC = 5 V)
The UPC2709T and UPC2712T are Silicon Monolithic inte-
grated circuits manufactured using the NESAT III process.
These devices are suitable as buffer amplifiers for wide-band
applications. They are designed for low cost gain stages in
cellular radios, GPS receivers, DBS tuners, PCN, and test/
measurement equipment.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
DESCRIPTION
California Eastern Laboratories


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