IRFR024, IRFU024, SiHFR024, SiHFU024

www.vishay.com

Vishay Siliconix

S13-0170-Rev. D, 04-Feb-13

1

Document Number: 91264

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Power MOSFET

FEATURES

• Dynamic dV/dt Rating

• Surface Mount (IRFR024, SiHFR024)

• Straight Lead (IRFU024, SiHFU024)

• Available in Tape and Reel

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Material categorization: For definitions of compliance

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The DPAK is designed for surface mounting using vapor

phase, infrared, or wave soldering techniques. The straight

lead version (IRFU, SiHFU series) is for through-hole

mounting applications. Power dissipation levels up to 1.5 W

are possible in typical surface mount applications.

Note

a. See device orientation.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

e. When mounted on 1" square PCB (FR-4 or G-10 material).

PRODUCT SUMMARY

60

0.10

25

5.8

11

Configuration

Single

N-Channel MOSFET

G

D

S

DPAK

(TO-252)

IPAK

(TO-251)

G

D S

S

D

G

D

ORDERING INFORMATION

Package

DPAK (TO-252)

DPAK (TO-252)

DPAK (TO-252)

IPAK (TO-251)

Lead (Pb)-free and Halogen-free

SiHFR024-GE3

SiHFR024TR-GE3

SiHFR024TRL-GE3

SiHFU024-GE3

Lead (Pb)-free

IRFR024PbF

-

IRFU024PbF

SiHFR024-E3

-

SiHFU024-E3

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

60

V

Gate-Source Voltage

± 20

Continuous Drain Current

14

A

9.0

56

Linear Derating Factor

0.33

W/°C

0.020

91

mJ

Maximum Power Dissipation

42

W

2.5

dV/dt

5.5

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

for 10 s

260