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SiHFP27N60K Datasheet(PDF) 4 Page - Vishay Siliconix |
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SiHFP27N60K Datasheet(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com Document Number: 91219 4 S11-0487-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFP27N60K, SiHFP27N60K Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area 1 10 100 1000 VDS, Drain-to-Source Voltage (V) 10 100 1000 10000 100000 Coss Crss Ciss VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds+ Cgd 0 30 60 90 120 150 0 2 5 7 10 12 Q , Total Gate Charge (nC) G I = D 28A V = 120V DS V = 300V DS V = 480V DS 0.1 1 10 100 1000 0.2 0.5 0.8 1.1 1.4 V ,Source-to-Drain Voltage (V) SD V = 0 V GS T = 150 C J ° T = 25 C J ° 10 100 1000 10000 VDS , Drain-toSource Voltage (V) 0.1 1 10 100 1000 Tc = 25°C Tj = 150°C Single Pulse 1msec 10msec OPERATION IN THIS AREA LIMITED BY RDS(on) 100µsec |
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