SUD50N06-09L datasheet(2/4 Pages) VISHAY

Part #	SUD50N06-09L

Description	N-Channel 60-V (D-S), 175C MOSFET, Logic Level

Download	4 Pages

Scroll/Zoom	100%

Manufacturer	VISHAY [Vishay Siliconix]

Direct Link	http://www.vishay.com

Logo

2 / 4 page

SUD50N06-09L

Vishay Siliconix

New Product

www.vishay.com

2

Document Number: 72004

S-21714—Rev. A, 07-Oct-02

SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 250 mA

60

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

1.0

2.0

3.0

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

VDS = 48 V, VGS = 0 V

1

Zero Gate Voltage Drain Current

IDSS

VDS = 48 V, VGS = 0 V, TJ = 125_C

50

mA

DSS

VDS = 48 V, VGS = 0 V, TJ = 175_C

250

m

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

50

A

VGS = 10 V, ID = 20 A

0.0074

0.0093

VGS = 10 V, ID = 20 A, TJ = 125_C

0.016

W

Drain-Source On-State Resistanceb

rDS(on)

VGS = 10 V, ID = 20 A, TJ = 175_C

0.020

W

VGS = 4.5 V, ID = 15 A

0.0122

Forward Transconductanceb

gfs

VDS = 15 V, ID = 20 A

S

Dynamic

Input Capacitance

Ciss

2650

Output Capacitance

Coss

VGS = 0 V, VDS = 25 V, f = 1 MHz

470

pF

Reverse Transfer Capacitance

Crss

225

Total Gate Chargec

Qg

47

70

Gate-Source Chargec

Qgs

VDS = 30 V, VGS = 10 V, ID = 50 A

10

nC

Gate-Drain Chargec

Qgd

DS

GS

D

12

Turn-On Delay Timec

td(on)

10

20

Rise Timec

tr

VDD = 30 V, RL = 0.6 W

15

25

Turn-Off Delay Timec

td(off)

VDD = 30 V, RL = 0.6 W

ID ^ 50 A, VGEN = 10 V, RG = 2.5 W

35

50

ns

Fall Timec

tf

20

30

Source-Drain Diode Ratings and Characteristics (TC = 25_C)

Pulsed Current

ISM

100

A

Diode Forward Voltage

VSD

IF = 20 A, VGS = 0 V

1.0

1.5

V

Reverse Recovery Time

trr

IF = 20 A, di/dt = 100 A/ms

45

100

ns

Notes:

a.

For design aid only; not subject to production testing.

b.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

c.

Independent of operating temperature.

Similar Part No. - SUD50N06-09L

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SUD50N06-09L	199Kb / 4P	N-Channel 60-V (D-S) 175Celsius MOSFET, Logic Level Rev. B, 01-May-06
Vishay Siliconix	SUD50N06-09L	163Kb / 8P	N-Channel 60 V (D-S), 175 °C MOSFET, Logic Level Rev. F, 11-Feb-13
Vishay Telefunken	SUD50N06-09L	163Kb / 8P	N-Channel 60 V (D-S), 175 째C MOSFET, Logic Level
Inchange Semiconductor ...	SUD50N06-09L	308Kb / 2P	isc N-Channel MOSFET Transistor
Vishay Siliconix	SUD50N06-09L	168Kb / 9P	N-Channel 60 V (D-S), 175 째C MOSFET, Logic Level 01-Jan-2022

More results

Similar Description - SUD50N06-09L

Manufacturer	Part #	Datasheet	Description
Vishay Siliconix	SUD15N06-90L	60Kb / 4P	N-Channel 60-V (D-S), 175C MOSFET, Logic Level Rev. D, 20-Sep-99
	SUD25N06-45L	79Kb / 4P	N-Channel 60-V (D-S), 175C MOSFET, Logic Level Rev. E, 24-Feb-98
	SUD10P06-280L	46Kb / 4P	P-Channel 60-V (D-S), 175C MOSFET, Logic Level Rev. F, 18-Apr-02
	SUD45N05-20L	71Kb / 4P	N-Channel 50-V (D-S), 175C MOSFET, Logic Level Rev. E, 23-Mar-98
Vaishali Semiconductor	SUM40N05-19L	69Kb / 5P	N-Channel 55-V (D-S), 175C MOSFET, Logic Level
Vishay Siliconix	SUP90N06-05L	59Kb / 5P	N-Channel 60-V (D-S) 175C MOSFET Rev. A, 09-Aug-04
	SUP75N06-08	47Kb / 4P	N-Channel 60-V (D-S), 175C MOSFET Rev. F, 10-Dec-01
	SUP85N06	49Kb / 5P	N-Channel 60-V (D-S) 175C MOSFET Rev. C, 22-Apr-02
	SUD50N06-08H	177Kb / 3P	N-Channel 60-V (D-S) 175c MOSFET 20-Oct-04
	SUM75N06-09L	44Kb / 5P	N-Channel 60-V (D-S), 175C MOSFET Rev. A, 25-Nov-02

More results

SUD50N06-09L Datasheet(PDF) 2 Page - Vishay Siliconix

SUD50N06-09L Datasheet(HTML) 2 Page - Vishay Siliconix

Similar Part No. - SUD50N06-09L

Similar Description - SUD50N06-09L

Html Pages

1 2 3 4

Datasheet Download

Link URL