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SUD50N06-09L Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SUD50N06-09L
Description  N-Channel 60-V (D-S), 175C MOSFET, Logic Level
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SUD50N06-09L Datasheet(HTML) 1 Page - Vishay Siliconix

   
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FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
APPLICATIONS
D Automotive
- ABS
- Motor Drives
- Fuel Injection
SUD50N06-09L
Vishay Siliconix
New Product
Document Number: 72004
S-21714—Rev. A, 07-Oct-02
www.vishay.com
1
N-Channel 60-V (D-S), 175
_C MOSFET, Logic Level
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)a
0.0093 @ VGS = 10 V
50
60
0.0122 @ VGS = 4.5 V
50
TO-252
S
GD
Top View
Drain Connected to Tab
Order Number:
SUD50N06-09L
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
VGS
"20
V
_
TC = 25_C
50
Continuous Drain Current (TJ = 175_C)b
TC = 100_C
ID
50a
Pulsed Drain Current
IDM
100
A
Continuous Source Current (Diode Conduction)
IS
50a
Avalanche Current
IAR
50
Repetitive Avalanche Energy (Duty Cycle
v 1%)
L = 0.1 mH
EAR
125
mJ
TC = 25_C
100
Maximum Power Dissipation
TA = 25_C
PD
3b, 8.3b, c
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 175
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Limit
Unit
t
p 10 sec.
15
18
Maximum Junction-to-Ambient
Steady State
RthJA
40
50
_C/W
Maximum Junction-to-Case
RthJC
1.2
1.5
C/W
Notes:
a.
Package limited.
b.
Surface mounted on 1” x 1” FR4 Board, t
v 10 sec.
c.
t
p 10 sec.


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