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SI7948DP Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI7948DP
Description  Dual N-Channel 60-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI7948DP Datasheet(HTML) 2 Page - Vishay Siliconix

   
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Si7948DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72403
S-31867—Rev. A, 15-Sep-03
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 mA
1
3
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V
1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = 60 V, VGS = 0 V, TJ = 55_C
5
mA
On-State Drain Currenta
ID(on)
VDS w 5 V, VGS = 10 V
15
A
Drain-Source On-State Resistancea
rDS(on)
VGS = 10 V, ID = 4.6 A
0.060
0.075
W
Drain-Source On-State Resistancea
rDS(on)
VGS = 4.5 V, ID = 4.0 A
0.080
0.100
W
Forward Transconductancea
gfs
VDS = 15 V, ID = 4.6 A
6
S
Diode Forward Voltagea
VSD
IS = 2.7 A, VGS = 0 V
0.8
1.2
V
Dynamicb
Total Gate Charge
Qg
12
20
Gate-Source Charge
Qgs
VDS = 30 V, VGS = 10 V, ID = 15 A
2
nC
Gate-Drain Charge
Qgd
3.5
Gate Resostamce
Rg
1.5
W
Turn-On Delay Time
td(on)
7
20
Rise Time
tr
VDD = 30 V, RL = 2 W
8
25
Turn-Off Delay Time
td(off)
VDD = 30 V, RL = 2 W
ID ^ 15 A, VGEN = 10 V, RG = 2.5 W
15
40
ns
Fall Time
tf
7
20
Source-Drain Reverse Recovery Time
trr
IF = 2.7 A, di/dt = 100 A/ms
30
60
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
3
6
9
12
15
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
3
6
9
12
15
012345
VGS = 10 thru 4 V
TC = 125_C
-55_C
3 V
25_C
Output Characteristics
Transfer Characteristics
VDS - Drain-to-Source Voltage (V)
VGS - Gate-to-Source Voltage (V)


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