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SI7948DP Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI7948DP
Description  Dual N-Channel 60-V (D-S) MOSFET
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Maker  VISHAY [Vishay Siliconix]
Homepage  http://www.vishay.com
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SI7948DP Datasheet(HTML) 1 Page - Vishay Siliconix

   
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FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKr Package
D Dual MOSFET for Space Savings
APPLICATIONS
D Automotive
- ABS
- Coil Driver
- Load Switch
Si7948DP
Vishay Siliconix
New Product
Document Number: 72403
S-31867—Rev. A, 15-Sep-03
www.vishay.com
1
Dual N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
60
0.075 @ VGS = 10 V
4.6
60
0.100 @ VGS = 4.5 V
4.0
N-Channel MOSFET
D1
G1
S1
N-Channel MOSFET
D2
G2
S2
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
6.15 mm
5.15 mm
Bottom View
PowerPAKr SO-8
Ordering Information: Si7948DP-T1
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
60
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
4.6
3.0
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
3.6
2.4
Pulsed Drain Current
IDM
15
A
Continuous Source Current (Diode Conduction)a
IS
2.7
1.2
Single Avalanche Current
L = 0.1 mH
IAS
15
Single Avalanche Energy
EAS
11
mJ
Maximum Power Dissipationa
TA = 25_C
PD
3.3
1.4
W
Maximum Power Dissipationa
TA = 70_C
PD
2.1
0.9
W
Operating Junction and Storage Temperature Range
TJ, Tstg
-55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Mi
J
ti
t A bi ta
t v 10 sec
R
29
38
Maximum Junction-to-Ambienta
Steady State
RthJA
60
85
_C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
4.0
5.2
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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