Electronic Components Datasheet Search |
|
CY62167GN30-45ZXIT Datasheet(PDF) 11 Page - Cypress Semiconductor |
|
CY62167GN30-45ZXIT Datasheet(HTML) 11 Page - Cypress Semiconductor |
11 / 19 page Document Number: 001-93628 Rev. *D Page 11 of 19 CY62167GN MoBL® Figure 8. Write Cycle No. 2 (CE1 or CE2 Controlled)[34, 35] Switching Waveforms (continued) tHD tSD tPWE tHA tAW tSCE tWC tHZOE DATA IN VALID tBW tSA NOTE CE1 ADDRESS CE2 WE DATA I/O OE BHE/BLE Notes 34. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE or BLE or both = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must refer to the edge of the signal that terminates the write. 35. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state. 36. During this period the I/Os are in output state. Do not apply input signals. |
Similar Part No. - CY62167GN30-45ZXIT |
|
Similar Description - CY62167GN30-45ZXIT |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |