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CY62167GN30-45ZXIT Datasheet(PDF) 11 Page - Cypress Semiconductor

Part # CY62167GN30-45ZXIT
Description  16-Mbit (1M16/2M 횞 8) Static RAM
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY62167GN30-45ZXIT Datasheet(HTML) 11 Page - Cypress Semiconductor

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Document Number: 001-93628 Rev. *D
Page 11 of 19
CY62167GN MoBL®
Figure 8. Write Cycle No. 2 (CE1 or CE2 Controlled)[34, 35]
Switching Waveforms (continued)
tHD
tSD
tPWE
tHA
tAW
tSCE
tWC
tHZOE
DATA IN VALID
tBW
tSA
NOTE
CE1
ADDRESS
CE2
WE
DATA I/O
OE
BHE/BLE
Notes
34. The internal write time of the memory is defined by the overlap of WE, CE1 = VIL, BHE or BLE or both = VIL, and CE2 = VIH. All signals must be ACTIVE to initiate a
write and any of these signals can terminate a write by going INACTIVE. The data input setup and hold timing must refer to the edge of the signal that terminates the write.
35. If CE1 goes HIGH and CE2 goes LOW simultaneously with WE = VIH, the output remains in a high impedance state.
36. During this period the I/Os are in output state. Do not apply input signals.


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