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TS5USBC412IYFFR Datasheet(PDF) 5 Page - Texas Instruments |
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TS5USBC412IYFFR Datasheet(HTML) 5 Page - Texas Instruments |
5 / 27 page 5 TS5USBC41 www.ti.com SCDS377 – MARCH 2018 Submit Documentation Feedback Copyright © 2018, Texas Instruments Incorporated (1) For more information about traditional and new thermalmetrics, see the Semiconductor and ICPackage Thermal Metrics application report. 6.4 Thermal Information THERMAL METRIC (1) Device UNIT YFF 12 PINS RθJA Junction-to-ambient thermal resistance 91.8 °C/W RθJC(top) Junction-to-case (top) thermal resistance 0.8 °C/W RθJB Junction-to-board thermal resistance 22.8 °C/W ψJT Junction-to-top characterization parameter 0.5 °C/W ψJB Junction-to-board characterization parameter 23.0 °C/W 6.5 Electrical Characteristics TA = –40°C to +85°C (Industrial), TA = 0℃ to 70℃ (Standard),VCC = 2.3 V to 5.5 V, GND = 0 V, Typical values are at VCC = 3.3 V, TA = 25°C, (unless otherwise noted) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT SUPPLY VCC Power supply voltage 2.3 5.5 V Icc Active supply current OE = 0 V SEL1, SEL2 = 0 V, 1.8 V or VCC 0 V < VI/O < 3.6 V 10 22 µA Supply current during OVP condition OE = 0 V SEL1, SEL2 = 0 V, 1.8 V or VCC VI/O > VPOS_THLD 15 35 μA ICC_PD Standby powered down supply current OE = 1.8 V or VCC SEL1 = 0 V, 1.8 V, or VCC SEL2 = 0 V, 1.8 V, or VCC 2.2 6 µA DC Characteristics RON ON-state resistance VI/O = 0.4 V ISINK = 8 mA Refer to ON-State Resistance Figure 5.6 9 Ω ΔRON ON-state resistance match between channels VI/O = 0.4 V ISINK = 8 mA Refer to ON-State Resistance Figure 0.07 0.3 Ω RON (FLAT) ON-state resistance flatness VI/O = 0 V to 0.4 V ISINK = 8 mA Refer to ON-State Resistance Figure 0.07 0.4 Ω IOFF I/O pin OFF leakage current VD± = 0 V or 3.6 V VCC = 2.3 V to 5.5 V VD1±or VD2+/- = 3.6 V or 0 V Refer to Off Leakage Figure -1 1 2 µA VD± = 0 V or 16 V VCC = 2.3 V to 5.5 V VD1± or VD2+/- = 0 V Refer to Off Leakage Figure -1 150 180 µA ION ON leakage current VD± = 0 V or 3.6 V VD1± and VD2+/- = high-Z Refer to On Leakage Figure -1 1 2 µA Digital Characteristics VIH Input logic high SEL1, SEL2, OE 1.4 V VIL Input logic low SEL1, SEL2, OE 0.5 V VOL Output logic low FLT IOL = 3 mA 0.4 V IIH Input high leakage current SEL1, SEL2, OE = 1.8 V, VCC -1 1 5 μA IIL Input low leakage current SEL1, SEL2, OE = 0 V -1 ±0.2 5 μA |
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