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CY14V116N-BZ45XI Datasheet(PDF) 9 Page - Cypress Semiconductor |
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CY14V116N-BZ45XI Datasheet(HTML) 9 Page - Cypress Semiconductor |
9 / 25 page CY14V116N Document #: 001-75791 Rev. *H Page 9 of 25 Preventing AutoStore The AutoStore function is disabled by initiating an AutoStore disable sequence. A sequence of read operations is performed in a manner similar to the Software STORE initiation. To initiate the AutoStore disable sequence, the following sequence of CE or OE controlled read operations must be performed: 1. Read address 0x4E38 Valid Read 2. Read address 0xB1C7 Valid Read 3. Read address 0x83E0 Valid Read 4. Read address 0x7C1F Valid Read 5. Read address 0x703F Valid Read 6. Read address 0x8B45 AutoStore Disable AutoStore is re-enabled by initiating an AutoStore enable sequence. A sequence of read operations is performed in a manner similar to the software RECALL initiation. To initiate the AutoStore enable sequence, the following sequence of CE or OE controlled read operations must be performed: 1. Read address 0x4E38 Valid Read 2. Read address 0xB1C7 Valid Read 3. Read address 0x83E0 Valid Read 4. Read address 0x7C1F Valid Read 5. Read address 0x703F Valid Read 6. Read address 0x4B46 AutoStore Enable If the AutoStore function is disabled or re-enabled, a manual software STORE operation must be performed to save the AutoStore state through subsequent power-down cycles. The part comes from the factory with AutoStore enabled and 0x00 written in all cells. Data Protection The CY14V116N protects data from corruption during low-voltage conditions by inhibiting all externally initiated STORE and write operations. The low-voltage condition is detected when VCC is less than VSWITCH. If the CY14V116N is in a Write mode at power-up (both CE and WE are LOW), after a RECALL or STORE, the write is inhibited until the SRAM is enabled after tLZHSB (HSB to output active). When VCC < VIODIS, I/Os are disabled (no STORE takes place). This protects against inadvertent writes during power-up or brown out conditions. |
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