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KTX311T Datasheet(PDF) 1 Page - KEC(Korea Electronics)

Part No. KTX311T
Description  EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
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Manufacturer  KEC [KEC(Korea Electronics)]
Direct Link  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KTX311T Datasheet(HTML) 1 Page - KEC(Korea Electronics)

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2002. 8. 13
1/4
SEMICONDUCTOR
TECHNICAL DATA
KTX311T
EPITAXIAL PLANAR PNP TRANSISTOR
SILICON EPITAXIAL PLANAR TYPE DIODE
Revision No : 2
GENERAL PURPOSE APPLICATION.
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Including two(TR, Diode) devices in TSV.
(Thin Super Mini type with 5 pin)
Simplify circuit design.
Reduce a quantity of parts and manufacturing process.
DIM MILLIMETERS
A
B
D
E
TSV
2.9 0.2
1.6+0.2/-0.1
0.70 0.05
0.4 0.1
2.8+0.2/-0.3
1.9 0.2
0.95
0.16 0.05
0.00-0.10
0.25+0.25/-0.15
C
F
G
H
I
J
K
0.60
L
0.55
B
E
H
J
J
2
3
15
4
+_
+_
+_
+_
+_
1. D ANODE
2. Q EMITTER
3. Q BASE
4. Q COLLECTOR
5. D CATHODE
1
1
1
1
1
MAXIMUM RATINGS (Ta=25
)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Repetitive Peak Reverse Voltage
VRRM
25
V
Reverse Voltage
VR
20
V
Average Forward Current
IO
1.0
A
Non-Repetitive Peak Surge current
IFSM
3
Junction Temperature
Tj
125
Storage Temperature
Tstg
-55~125
EQUIVALENT CIRCUIT (TOP VIEW)
1
D1
Q1
23
54
MARK SPEC
* Package mounted on a ceramic board (600
0.8
)
h
Rank
FE
Type Name
Marking
Lot No.
C
12
3
54
Type
KTX311T
KTX311T
Q1 hFE Rank : Y
Q1 hFE Rank : GR
Mark
CB
CC
TRANSISTOR Q1
CHARACTERISTIC
SYMBOL
RATING
UNIT
Collector-Base Voltage
VCBO
-30
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Collector Current
IC
-1
A
Emitter Current
IE
1
A
Collector Power Dissipation
PC *
0.9
Junction Temperature
Tj
150
Storage Temperature Range
Tstg
-55~150
DIODE D1


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