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KTX311T Datasheet(PDF) 2 Page - KEC(Korea Electronics)

Part No. KTX311T
Description  EPITAXIAL PLANAR PNP TRANSISTOR SILICON EPITAXIAL PLANAR TYPE DIODE
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Manufacturer  KEC [KEC(Korea Electronics)]
Direct Link  http://www.keccorp.com
Logo KEC - KEC(Korea Electronics)

KTX311T Datasheet(HTML) 2 Page - KEC(Korea Electronics)

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2002. 8. 13
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KTX311T
Revision No : 2
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Collector Cut-off Current
ICBO
VCB=-20V, IE=0
-
-
-0.1
Emitter Cut-off Current
IEBO
VEB=-5V, IC=0
-
-
-0.1
DC Current Gain
hFE(1) (Note)
VCE=-2V, IC=-50
120
-
400
hFE(2)
VCE=-2V, IC=-1A (Pulse)
30
-
-
Collector-Emitter Saturation Voltage
VCE(SAT)
IC=-500 , IB=-50
-
-0.15
-0.3
V
Base-Emitter Saturation Voltage
VBE(SAT)
IC=-500 , IB=-50
-
-0.85
-1.2
V
Transition Frequency
fT
VCE=-10V, IC=-50
-
180
-
Collector Output Capacitance
Cob
VCB=-10V, IE=0, f=1
-
25
-
Note) hFE Classification
Y:120~240,
GR:200~400.
ELECTRICAL CHARACTERISTICS (Ta=25
)
TRANSISTOR Q1
DIODE D1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Forward Voltage
VF
IF=1.0A
-
0.4
0.45
V
Reverse Current
IR
VR=20V
-
-
200


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