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CY7C2270KV18-550BZXC Datasheet(PDF) 6 Page - Cypress Semiconductor

Part # CY7C2270KV18-550BZXC
Description  36-Mbit DDR II SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C2270KV18-550BZXC Datasheet(HTML) 6 Page - Cypress Semiconductor

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CY7C2268KV18/CY7C2270KV18
Document Number: 001-57845 Rev. *I
Page 6 of 31
Functional Overview
The CY7C2268KV18, and CY7C2270KV18 are synchronous
pipelined burst SRAMs equipped with a DDR interface, which
operates with a read latency of two and half cycles when DOFF
pin is tied HIGH. When DOFF pin is set LOW or connected to
VSS the device behaves in DDR I mode with a read latency of
one clock cycle.
Accesses are initiated on the rising edge of the positive input
clock (K). All synchronous input and output timing is referenced
from the rising edge of the input clocks (K and K).
All synchronous data inputs (D[x:0]) pass through input registers
controlled by the rising edge of the input clocks (K and K). All
synchronous data outputs (Q[x:0]) pass through output registers
controlled by the rising edge of the input clocks (K and K).
All synchronous control (R/W, LD, BWS[X:0]) inputs pass through
input registers controlled by the rising edge of the input clock (K).
CY7C2268KV18 is described in the following sections. The
same basic descriptions apply to CY7C2270KV18.
Read Operations
The CY7C2268KV18 is organized internally as two arrays of
1M × 18. Accesses are completed in a burst of 2 sequential
18-bit data words. Read operations are initiated by asserting
R/W HIGH and LD LOW at the rising edge of the positive input
clock (K). The address presented to the address inputs is stored
in the read address register. Following the next two K clock rise,
the corresponding 18-bit word of data from this address location
is driven onto the Q[17:0] using K as the output timing reference.
On the subsequent rising edge of K, the next 18-bit data word is
driven onto the Q[17:0]. The requested data is valid 0.45 ns from
the rising edge of the input clock (K and K). To maintain the
internal logic, each read access must be allowed to complete.
Read accesses can be initiated on every rising edge of the
positive input clock (K).
When read access is deselected, the CY7C2268KV18 first
completes the pending read transactions. Synchronous internal
circuitry automatically tri-states the output following the next
rising edge of the negative input clock (K). This enables for a
transition between devices without the insertion of wait states in
a depth expanded memory.
Write Operations
Write operations are initiated by asserting R/W LOW and LD
LOW at the rising edge of the positive input clock (K). The
address presented to address inputs is stored in the write
address register. On the following K clock rise, the data
presented to D[17:0] is latched and stored into the 18-bit write
data register, provided BWS[1:0] are both asserted active. On the
subsequent rising edge of the negative input clock (K) the
information presented to D[17:0] is also stored into the write data
register, provided BWS[1:0] are both asserted active. The 36 bits
of data are then written into the memory array at the specified
location. Write accesses can be initiated on every rising edge of
the positive input clock (K). Doing so pipelines the data flow such
that 18 bits of data can be transferred into the device on every
rising edge of the input clocks (K and K).
When the write access is deselected, the device ignores all
inputs after the pending write operations are completed.
Byte Write Operations
Byte write operations are supported by the CY7C2268KV18. A
write operation is initiated as described in the section Write
Operations on page 6. The bytes that are written are determined
DOFF
Input
PLL turn off
 active LOW. Connecting this pin to ground turns off the PLL inside the device. The timing
in the PLL turned off operation differs from those listed in this data sheet. For normal operation, this pin
can be connected to a pull up through a 10 k
 or less pull-up resistor. The device behaves in DDR I
mode when the PLL is turned off. In this mode, the device can be operated at a frequency of up to
167 MHz with DDR I timing.
TDO
Output
TDO pin for JTAG.
TCK
Input
TCK pin for JTAG.
TDI
Input
TDI pin for JTAG.
TMS
Input
TMS pin for JTAG.
NC
N/A
Not connected to the die. Can be tied to any voltage level.
NC/72M
Input
Not connected to the die. Can be tied to any voltage level.
NC/144M
Input
Not connected to the die. Can be tied to any voltage level.
NC/288M
Input
Not connected to the die. Can be tied to any voltage level.
VREF
Input-
reference
Reference voltage input. Static input used to set the reference level for HSTL inputs, outputs, and AC
measurement points.
VDD
Power supply Power supply inputs to the core of the device.
VSS
Ground
Ground for the device.
VDDQ
Power supply Power supply inputs for the outputs of the device.
Pin Definitions (continued)
Pin Name
I/O
Pin Description


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