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FSCQ1565RP Datasheet(PDF) 4 Page - Fairchild Semiconductor |
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FSCQ1565RP Datasheet(HTML) 4 Page - Fairchild Semiconductor |
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FSCQ1565RP 4 Absolute Maximum Ratings (Ta=25 °C, unless otherwise specified) Notes: 1. Tj = 25 °C to 150°C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L = 21mH, VDD = 50V, RG = 25 Ω, starting Tj = 25°C Parameter Symbol Value Unit Drain-Source (GND) Voltage (1) VDSS 650 V Drain-Gate Voltage (RGS=1M Ω)VDGR 650 V Gate-Source (GND) Voltage VGS ±30 V Drain Current Pulsed (2) IDM 45 ADC Single Pulsed Avalanche Energy (3) EAS 1050 mJ Continuous Drain Current (Tc = 25°C) ID 8.3 ADC Continuous Drain Current (TC=100 °C) ID 5.5 ADC Supply Voltage VCC 20 V Analog Input Voltage Range Vsync -0.3 to 13V V VFB -0.3 to VCC V Total Power Dissipation PD 98 W Operating Junction Temperature TJ +150 °C Operating Ambient Temperature TA -25 to +85 °C Storage Temperature Range TSTG -55 to +150 °C Thermal Resistance Rthjc 1.28 °C/W ESD Capability, HBM Model (All pins excepts for Vfb) - 2.0 (Vfb=1.7kV) kV ESD Capability, Machine Model (All pins excepts for Vfb) - 300 (Vfb=170V) V |
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