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2SK3310 Datasheet(PDF) 2 Page - Toshiba Semiconductor

Part # 2SK3310
Description  TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PI-MOSV)
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Manufacturer  TOSHIBA [Toshiba Semiconductor]
Direct Link  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK3310 Datasheet(HTML) 2 Page - Toshiba Semiconductor

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2SK3310
2002-09-04
2
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±25 V, VDS = 0 V
¾
¾
±10
mA
Gate -source breakdown voltage
V (BR) GSS
IG = ±10 mA, VDS = 0 V
±30
¾
¾
V
Drain cut-off current
IDSS
VDS = 450 V, VGS = 0 V
¾
¾
100
mA
Drain-source breakdown voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
450
¾
¾
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
3.0
¾
5.0
V
Drain-source ON resistance
RDS (ON)
VGS = 10 V, ID = 5 A
¾
0.48
0.65
W
Forward transfer admittance
ïYfsï
VDS = 10 V, ID = 5 A
1.5
4.3
¾
S
Input capacitance
Ciss
¾
920
¾
Reverse transfer capacitance
Crss
¾
12
¾
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
¾
140
¾
pF
Rise time
tr
¾
25
¾
Turn-on time
ton
¾
35
¾
Fall time
tf
¾
10
¾
Switching time
Turn-off time
toff
¾
60
¾
ns
Total gate charge
Qg
¾
23
¾
Gate-source charge
Qgs
¾
9
¾
Gate-drain charge
Qgd
VDD ~- 360 V, VGS = 10 V, ID = 10 A
¾
14
¾
nC
Source-Drain Ratings and Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current (Note 1)
IDR
¾
¾
¾
10
A
Pulse drain reverse current
(Note 1)
IDRP
¾
¾
¾
40
A
Forward voltage (diode)
VDSF
IDR = 10 A, VGS = 0 V
¾
¾
-1.7
V
Reverse recovery time
trr
¾
280
¾
ns
Reverse recovery charge
Qrr
IDR = 10 A, VGS = 0 V,
dIDR/dt = 100 A/ms
¾
2.7
¾
mC
Marking
Type
K3310
Lot Number
Month (starting from alphabet A)
Year
(last number of the christian era)
Duty <= 1%, tw = 10 ms
0 V
10 V
VGS
RL = 40 W
VDD ~- 200 V
ID = 5 A
VOUT


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