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2SK3310 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3310 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3310 2002-09-04 4 RDS (ON) – Tc IDR – VDS Vth – Tc PD – Tc 160 0 1 3 2 6 5 4 -80 -40 0 40 80 120 Common source VDS = 10 V ID = 1 mA Pulse test 0 0.01 -0.4 0.1 1 10 100 -0.6 -0.8 -1.2 5 -0.2 -1 10 1 3 VGS = 0, -1 V Common source Tc = 25°C Pulse test 0 10 30 20 50 40 200 0 40 80 120 160 Case temperature Tc (°C) Drain-source voltage VDS (V) Drain-source voltage VDS (V) Capacitance – VDS Case temperature Tc (°C) Case temperature Tc (°C) Total gate charge Qg (nC) Dynamic input/output characteristics 500 400 0 100 200 300 0 10 20 30 50 40 Common source ID = 10 A Tc = 25°C Pulse test VDS 360 180 VGS VDD = 90 V 0 4 8 12 20 16 2.0 1.2 0 -80 -40 0 40 80 160 120 0.4 0.8 ID = 10 A 2.5 5 1.6 Common source VGS = 10 V Pulse test 3 0.1 10 100 1000 3000 1 10 100 300 Common source VGS = 0 V f = 1 MHz Tc = 25°C Ciss Coss Crss 30 3 0.3 30 300 |
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