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CY7C1381KV33 Datasheet(PDF) 22 Page - Cypress Semiconductor

Part No. CY7C1381KV33
Description  18-Mbit (512K × 36/1M × 18) Flow-Through SRAM (With ECC)
Download  34 Pages
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Maker  CYPRESS [Cypress Semiconductor]
Homepage  http://www.cypress.com
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CY7C1381KV33 Datasheet(HTML) 22 Page - Cypress Semiconductor

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CY7C1381KV33/CY7C1381KVE33
CY7C1383KV33/CY7C1383KVE33
Document Number: 001-97888 Rev. *F
Page 22 of 34
IX
Input Leakage Current except ZZ
and MODE
GND
 VI  VDDQ
–5
5
A
Input Current of MODE
Input = VSS
–30
Input = VDD
5
Input Current of ZZ
Input = VSS
–5
Input = VDD
30
IOZ
Output Leakage Current
GND
 VI  VDDQ, Output Disabled
–5
5
A
IDD
VDD Operating Supply
VDD = Max.,
IOUT = 0 mA,
f = fMAX = 1/tCYC
100 MHz
× 18
114
mA
× 36
134
133 MHz
× 18
129
× 36
149
ISB1
Automatic CE Power-down
Current – TTL Inputs
Max. VDD,
Device Deselected,
VIN  VIH or VIN  VIL,
f = fMAX = 1/tCYC
100 MHz
× 18
75
mA
× 36
80
133 MHz
× 18
75
× 36
80
ISB2
Automatic CE Power-down
Current – CMOS Inputs
Max. VDD,
Device Deselected,
VIN  0.3 V or
VIN > VDDQ 0.3 V,
f = 0
All speed
grades
× 18
65
mA
× 36
70
ISB3
Automatic CE Power-down
Current – CMOS Inputs
Max. VDD,
Device Deselected,
VIN  0.3 V or
VIN > VDDQ 0.3 V,
f = fMAX = 1/tCYC
100 MHz
× 18
75
mA
× 36
80
133 MHz
× 18
75
× 36
80
ISB4
Automatic CE Power-down
Current – TTL Inputs
Max. VDD,
Device Deselected,
VIN  VIH or VIN  VIL,
f = 0
All speed
grades
× 18
–65
mA
× 36
–70
Electrical Characteristics (continued)
Over the Operating Range
Parameter [14, 15]
Description
Test Conditions
Min
Max
Unit


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