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CY7C1049GE30-10ZSXIT Datasheet(PDF) 7 Page - Cypress Semiconductor

Part # CY7C1049GE30-10ZSXIT
Description  4-Mbit (512K words 횞 8 bit) Static RAM with Error-Correcting Code (ECC)
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Manufacturer  CYPRESS [Cypress Semiconductor]
Direct Link  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CY7C1049GE30-10ZSXIT Datasheet(HTML) 7 Page - Cypress Semiconductor

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CY7C1049G
CY7C1049GE
Document Number: 001-95412 Rev. *E
Page 7 of 19
Capacitance
Parameter [10]
Description
Test Conditions
36-pin SOJ
44-pin TSOP II Unit
CIN
Input capacitance
TA = 25 C, f = 1 MHz,
VCC = VCC(typ)
10
10
pF
COUT
I/O capacitance
10
10
pF
Thermal Resistance
Parameter [10]
Description
Test Conditions
36-pin SOJ
44-pin TSOP II Unit
JA
Thermal resistance
(junction to ambient)
Still air, soldered on a 3 × 4.5 inch,
four-layer printed circuit board
59.52
68.85
C/W
JC
Thermal resistance
(junction to case)
31.48
15.97
C/W
AC Test Loads and Waveforms
Figure 4. AC Test Loads and Waveforms [11]
90%
10%
VHIGH
GND
90%
10%
All Input Pulses
VCC
Output
5 pF*
* Including
jig and
scope
(b)
R1
R2
Rise Time:
Fall Time:
> 1 V/ns
(c)
Output
50
Z0 = 50 
VTH
30 pF*
* Capacitive load consists
of all components of the
test environment
High-Z Characteristics:
(a)
> 1 V/ns
Parameters
1.8 V
3.0 V
5.0 V
Unit
R1
1667
317
317
R2
1538
351
351
VTH
0.9
1.5
1.5
V
VHIGH
1.8
3
3
V
Notes
10. Tested initially and after any design or process changes that may affect these parameters.
11. Full-device AC operation assumes a 100-µs ramp time from 0 to VCC(min) and a 100-µs wait time after VCC stabilization.


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