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CY7C1051H30-10BV1XET Datasheet(PDF) 6 Page - Cypress Semiconductor |
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CY7C1051H30-10BV1XET Datasheet(HTML) 6 Page - Cypress Semiconductor |
6 / 16 page Document Number: 001-87624 Rev. *G Page 6 of 16 CY7C1051H Automotive Data Retention Characteristics Over the Operating Range Parameter Description Conditions Min Max Unit VDR VCC for data retention – 1.0 – V ICCDR Data retention current VCC = VDR, CE > VCC – 0.2 V, VIN > VCC – 0.2 V or VIN < 0.2 V –50 mA tCDR[7] Chip deselect to data retention time – 0 – ns tR[8] Operation recovery time VCC > 2.2 V 10 – ns Data Retention Waveform Figure 3. Data Retention Waveform 3.0 V 3.0 V tCDR VDR > 1 V DATA RETENTION MODE tR CE VCC Notes 7. Tested initially and after any design or process changes that may affect these parameters. 8. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 100 s or stable at VCC(min.) > 100 s. |
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