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ST1280C04K0L Datasheet(PDF) 2 Page - International Rectifier |
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ST1280C04K0L Datasheet(HTML) 2 Page - International Rectifier |
2 / 7 page ST1280C..K Series 2 www.irf.com Bulletin I25195 rev. B 02/00 Voltage V DRM /V RRM , max. repetitive V RSM , maximum non- I DRM /I RRM max. Type number Code peak and off-state voltage repetitive peak voltage @ T J = TJ max VV mA 04 400 500 06 600 700 ELECTRICAL SPECIFICATIONS Voltage Ratings di/dt Max. non-repetitive rate of rise Gate drive 20V, 20 Ω, t r ≤ 1µs of turned-on current T J = T J max, anode voltage ≤ 80% V DRM Gate current 1A, di g /dt = 1A/µs V d = 0.67% V DRM , T J = 25°C I TM = 550A, TJ = T J max, di/dt = 40A/µs , VR = 50V dv/dt = 20V/µs, Gate 0V 100 Ω, t p = 500µs Parameter ST1280C..K Units Conditions Switching 1000 A/µs t d Typical delay time 1.9 t q Typical turn-off time 200 µs ST1280C..K 100 I T(AV) Max. average on-state current 2310 (885) A 180° conduction, half sine wave @ Heatsink temperature 55 (85) °C double side (single side) cooled I T(RMS) Max. RMS on-state current 4150 @ 25°C heatsink temperature double side cooled I TSM Max. peak, one-cycle 42500 t = 10ms No voltage non-repetitive surge current 44500 A t = 8.3ms reapplied 35700 t = 10ms 100% V RRM 37400 t = 8.3ms reapplied Sinusoidal half wave, I 2t Maximum I 2t for fusing 9027 t = 10ms No voltage Initial T J = TJ max. 8241 t = 8.3ms reapplied 6383 t = 10ms 100% V RRM 5828 t = 8.3ms reapplied I 2√t Maximum I 2√t for fusing 90270 KA 2√s t = 0.1 to 10ms, no voltage reapplied V T(TO)1 Low level value of threshold voltage V T(TO)2 High level value of threshold voltage r t1 Low level value of on-state slope resistance r t2 High level value of on-state slope resistance V TM Max. on-state voltage 1.44 V I pk = 8000A, T J = T J max, t p = 10ms sine pulse I H Maximum holding current 600 I L Typical latching current 1000 0.83 (16.7% x π x I T(AV) < I < π x I T(AV) ), T J = T J max. 0.077 (16.7% x π x I T(AV) < I < π x I T(AV) ), T J = T J max. 0.068 (I > π x I T(AV)), TJ = TJ max. Parameter ST1280C..K Units Conditions 0.90 (I > π x I T(AV)),TJ = TJ max. On-state Conduction KA 2s V m Ω mA T J = 25° C, anode supply 12V resistive load |
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