Document Number: 002-03902 Rev. *D

Page 8 of 14

SUPPLEMENT

S71KS512SC0

S71KL256SC0

S71KL512SC0

Electrical Specifications

For the general description of the HyperBus interface electrical

specifications, refer to the HyperBus Specification. The following

section describes HyperFlash device dependent aspects of

electrical specifications.

Absolute Maximum Ratings

Ambient Temperature with Power Applied:

DC Characteristics

Only one memory may have its chip select active (Low) at any

point in time. For each of the conditions below refer to the Hyper-

Flash and HyperRAM datasheets for the most accurate infor-

mation:

device plus the standby current of the non-selected device. But,

the added standby current is generally not significant as it is

less than 300

A.

the standby current of the non-selected device. But, the added

standby current is generally not significant as it is less than

300

A.

Note however, that program and erase operations are long time

frame events that extend beyond the duration of a HyperFlash

chip select period. Thus, if the HyperRAM is selected for read

or write during an on going HyperFlash program or erase

operation, the active current will be the sum of the HyperFlash

program or erase operation and the HyperRAM read or write

current.

embedded flash operation is in progress, is the sum of the

memory standby currents.

DPD currents.

standby currents.

currents.

For reference purpose, Table 3 aids in the estimation of the

above operating conditions current consumption. However, refer

to the HyperFlash and HyperRAM datasheets for the most

accurate information.