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BC558C Datasheet(PDF) 2 Page - Diotec Semiconductor

Part No. BC558C
Description  General Purpose PNP Transistors
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Maker  DIOTEC [Diotec Semiconductor]
Homepage  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC558C Datasheet(HTML) 2 Page - Diotec Semiconductor

  BC558C Datasheet HTML 1Page - Diotec Semiconductor BC558C Datasheet HTML 2Page - Diotec Semiconductor  
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BC556 ... BC559
Characteristics
Kennwerte
Tj = 25°C
Min.
Typ.
Max.
DC current gain – Kollektor-Basis-Stromverhältnis 1)
- VCE = 5 V
- IC = 10 µA
Group A
Group B
Group C
hFE
90
150
270
- IC = 2 mA
Group A
Group B
Group C
hFE
110
200
420
220
450
800
- IC = 100 mA
Group A
Group B
Group C
hFE
120
200
400
Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom
- VCE =
80 V
50 V
30 V
B-E short
BC556
BC557
BC558 / BC559
- ICES
0.2 nA
15 nA
- VCE =
80 V
50 V
30 V
B-E short
Tj = 125°C
BC556
BC557
BC558 / BC559
- ICES
4 µA
Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 1)
- IC = 10 mA
- IB = 0.5 mA
- IC = 100 mA
- IB = 5 mA
- VCEsat
80 mV
250 mV
300 mV
650 mV
Base-Emitter saturation voltage – Basis-Emitter-Sättigungsspannung 1)
- IC = 10 mA
- IB = 0.5 mA
- IC = 100 mA
- IB = 5 mA
- VBEsat
700 mV
900 mV
Base-Emitter-voltage – Basis-Emitter-Spannung 1)
- VCE = 5 V
- IC = 2 mA
- IC = 10 mA
- VBE
600 mV
660 mV
750 mV
820 mV
Gain-Bandwidth Product – Transitfrequenz
- VCE = 5 V, - IC = 10 mA, f = 100 MHz
fT
150 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
- VCB = 10 V, IE =ie = 0, f = 1 MHz
CCBO
3.5 pF
6 pF
Emitter-Base Capacitance – Emitter-Basis-Kapazität
- VEB = 0.5 V, IC = ic = 0, f = 1 MHz
CEBO
10 pF
Noise figure – Rauschzahl
- VCE = 5 V, - IC = 200 µA, RG = 2 kΩ
f = 1 kHz, Δf = 200 Hz
BC556 ... BC558
BC559
F
2 dB
1 dB
10 dB
4 dB
Thermal resistance junction to ambient
Wärmewiderstand Sperrschicht – Umgebung
RthA
< 200 K/W 2)
Disclaimer: See data book page 2 or website
Haftungssauschluss: Siehe Datenbuch Seite 2 oder Internet
1
Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%
2
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
http://www.diotec.com/
© Diotec Semiconductor AG


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