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BC558C Datasheet(PDF) 1 Page - Diotec Semiconductor

Part No. BC558C
Description  General Purpose PNP Transistors
Download  2 Pages
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Maker  DIOTEC [Diotec Semiconductor]
Homepage  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

BC558C Datasheet(HTML) 1 Page - Diotec Semiconductor

  BC558C Datasheet HTML 1Page - Diotec Semiconductor BC558C Datasheet HTML 2Page - Diotec Semiconductor  
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BC556 ... BC559
BC556 ... BC559
General Purpose PNP Transistors
Universal-PNP-Transistoren
IC
= -100 mA
hFE ~ 120/200/400
Tjmax = 150°C
VCEO = -30 ...-65 V
Ptot = 500 mW
Version 2018-02-01
TO-92 (10D3)
(1)
(2)
Dimensions - Maße [mm]
Typical Applications
Signal processing,
Switching, Amplification
Commercial grade 1)
Typische Anwendungen
Signalverarbeitung,
Schalten, Verstärken
Standardausführung 1)
Features
General Purpose
Three current gain groups
Compliant to RoHS, REACH,
Conflict Minerals 1)
Besonderheiten
Universell anwendbar
Drei Stromverstärkungsklassen
Konform zu RoHS, REACH,
Konfliktmineralien 1)
Mechanical Data 1)
Mechanische Daten 1)
(1) Taped in ammo pack
(Raster 2.54)
(2) On request: in bulk
(Raster 1.27, suffix “BK”)
4000
5000
(1) Gegurtet in Ammo-Pack
(Raster 2.54)
(2) Auf Anfrage: Schüttgut
(Raster 1.27, Suffix “BK”)
Weight approx.
0.18 g
Gewicht ca.
Case material
UL 94V-0
Gehäusematerial
Solder & assembly conditions
260°C/10s
Löt- und Einbaubedingungen
MSL N/A
Current gain groups
Stromverstärkungsgruppen
Recommended complementary NPN transistors
Empfohlene komplementäre NPN-Transistoren
BC556A
BC557A
BC558A
BC559A
BC556B
BC557B
BC558B
BC559B
BC556C
BC557C
BC558C
BC559C
BC546 ... BC549
Maximum ratings 2)
Grenzwerte 2)
BC556
BC557
BC558/559
Collector-Emitter-voltage – Kollektor-Emitter-Spannung
E-B short
- VCES
80 V
50 V
30 V
Collector-Emitter-voltage – Kollektor-Emitter-Spannung
B open
- VCEO
65 V
45 V
30 V
Emitter-Base-voltage – Emitter-Basis-Spannung
E open
- VCBO
80 V
50 V
30 V
Emitter-Base-voltage – Emitter-Basis-Spannung
C open
- VEBO
5 V
Power dissipation – Verlustleistung
Ptot
500 mW 3)
Collector current – Kollektorstrom
DC
- IC
100 mA
Peak Collector current – Kollektor-Spitzenstrom
- ICM
200 mA
Peak Base current – Basis-Spitzenstrom
- IBM
200 mA
Peak Emitter current – Emitter-Spitzenstrom
IEM
200 mA
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-55...+150°C
-55…+150°C
1
Please note the detailed information on our website or at the beginning of the data book
Bitte beachten Sie die detaillierten Hinweise auf unserer Internetseite bzw. am Anfang des Datenbuches
2
TA = 25°C, unless otherwise specified – TA = 25°C, wenn nicht anders angegeben
3
Valid, if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
2 x 2.54
C B E
2 x 1.27
C B E
4.6±0.1
Pb
RoHS


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