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BB504C Datasheet(PDF) 1 Page - Hitachi Semiconductor

Part No. BB504C
Description  Build in Biasing Circuit MOS FET IC VHF&UHF RF Amplifier
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Maker  HITACHI [Hitachi Semiconductor]
Homepage  http://www.renesas.com/eng
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BB504C Datasheet(HTML) 1 Page - Hitachi Semiconductor

 
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BB504C
Build in Biasing Circuit MOS FET IC
VHF&UHF RF Amplifier
ADE-208-983D (Z)
5th. Edition
Dec. 2000
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.0 dB typ. at f = 200 MHz,NF =1.75 dB typ. at f =900 MHz
• High gain; PG = 30 dB typ. at f = 200 MHz, PG = 22 dB typ. at f = 900 MHz
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; CMPAK-4 (SOT-343mod)
Outline
CMPAK-4
1. Source
2. Gate1
3. Gate2
4. Drain
1
4
3
2
Notes:
1.
Marking is “DS–”.
2.
BB504C is individual type number of HITACHI BBFET.


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