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2SK3236 Datasheet(PDF) 4 Page - Toshiba Semiconductor |
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2SK3236 Datasheet(HTML) 4 Page - Toshiba Semiconductor |
4 / 6 page 2SK3236 2002-08-12 4 RDS (ON) - Tc IDR - VDS Vth - Tc PD - Tc Dynamic input/output characteristics Case temperature Tc (°C) Drain-source voltage VDS (V) Case temperature Tc (°C) Case temperature Tc (°C) Total gate charge Qg (nC) Capacitance – VDS Drain-source voltage VDS (V) 0 -80 -40 0 40 80 120 160 0.5 1 1.5 2.5 3 2 Common source VDS = 10 V ID = 1 mA Pulse test 1 0.0 -0.4 -1.2 10 100 Common source Tc = 25°C Pulse test -0.8 -1.6 -2.0 VGS = 0 V 3 5 1 10 Crss Ciss Coss 100000 Common source VGS = 0 V f = 1 MHz Tc = 25°C 0.1 10000 1000 100 1 10 100 0 0 40 120 160 10 30 50 20 80 40 0 -80 -40 0 40 80 120 160 0.02 0.04 0.06 0.08 0.1 VGS = 10 V VGS = 4 V 10 20 10 35 20 Common source Pulse test 0 0 40 80 40 80 Common source ID = 35 A Tc = 25°C Pulse test 60 20 60 20 24 12 VDD = 48 V VDS VGS 0 10 20 5 15 |
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