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SPU30N03L Datasheet(PDF) 4 Page - Siemens Semiconductor Group |
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SPU30N03L Datasheet(HTML) 4 Page - Siemens Semiconductor Group |
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4 / 9 page  4 Semiconductor Group SPD30N03L Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Dynamic Characteristics Gate to source charge VDD = 24 V, ID = 30 A 6 nC 4 Qgs - - 21 Qgd Gate to drain charge VDD = 24 V, ID = 30 A 31.5 Gate charge total VDD = 24 V, ID = 30 A, VGS = 0 to 10 V - 54 80 Qg Gate plateau voltage VDD = 24 V, ID = 30 A V(plateau) 3.31 - V - Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - 30 A Inverse diode direct current,pulsed TC = 25 °C ISM - - 120 Inverse diode forward voltage VGS = 0 V, IF = 60 A VSD - 0.97 V 1.7 Reverse recovery time VR = 15 V, IF=IS , diF/dt = 100 A/µs trr - 45 ns 68 Reverse recovery charge VR = 15 V, IF=lS , diF/dt = 100 A/µs Qrr - µC 0.045 0.068 |
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