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SPD30N03L Datasheet(PDF) 2 Page - Siemens Semiconductor Group |
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SPD30N03L Datasheet(HTML) 2 Page - Siemens Semiconductor Group |
2 / 9 page 2 Semiconductor Group SPD30N03L Thermal Characteristics Parameter Values Symbol Unit typ. max. min. Characteristics RthJC - - 1.25 K/W Thermal resistance, junction - case - Thermal resistance, junction - ambient, leded RthJA - 100 - - - - 75 50 SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Unit Values min. max. typ. Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = 0.25 mA - V(BR)DSS 30 - V Gate threshold voltage, VGS = VDS ID = 80 µA VGS(th) 2 1.6 1.2 Zero gate voltage drain current VDS = 30 V, VGS = 0 V, Tj = 25 °C VDS = 30 V, VGS = 0 V, Tj = 150 °C - IDSS µA 1 100 0.1 - Gate-source leakage current VGS = 20 V, VDS = 0 V IGSS - 10 nA 100 Drain-Source on-state resistance VGS = 4.5 V, ID = 30 A VGS = 10 V, ID = 30 A RDS(on) - - 0.013 0.0076 0.018 0.012 Ω 1 Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection. PCB is vertical without blown air. |
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Similar Description - SPD30N03L |
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