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SPD30N03L Datasheet(PDF) 7 Page - Siemens Semiconductor Group |
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SPD30N03L Datasheet(HTML) 7 Page - Siemens Semiconductor Group |
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7 / 9 page  7 Semiconductor Group SPD30N03L Drain-source on-resistance RDS(on) = f (Tj) parameter : ID = 30 A, VGS = 4.5 V -60 -20 20 60 100 140 °C 200 Tj 0.000 0.005 0.010 0.015 0.020 0.025 0.030 0.035 0.040 Ω 0.050 SPD30N03L typ 98% Gate threshold voltage VGS(th) = f (Tj) parameter : VGS = VDS, ID = 80 µA -60 -20 20 60 100 140 °C 200 Tj 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 V 3.0 min typ max Typ. capacitances C = f (VDS) parameter: VGS = 0 V, f = 1 MHz 0 5 10 15 20 25 30 V 40 VDS 2 10 3 10 4 10 pF Ciss Coss Crss Forward characteristics of reverse diode IF = f (VSD) parameter: Tj , tp = 80 µs 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD 0 10 1 10 2 10 3 10 A SPD30N03L T j = 25 °C typ T j = 25 °C (98%) T j = 175 °C typ T j = 175 °C (98%) |
Similar Part No. - SPD30N03L |
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Similar Description - SPD30N03L |
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