PNZ163NC datasheet(2/3 Pages) PANASONIC

Part #	PNZ163NC

Description	Silicon NPN Phototransistor

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Manufacturer	PANASONIC [Panasonic Semiconductor]

Direct Link	http://www.panasonic.com/industrial/

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2

Phototransistors

PNZ163NC

tr — ICE(L)

Collector photo current

I

CE(L) (mA)

VCC = 10V

Ta = 25˚C

10 4

10 3

10 2

10

1

10 –1

10

10 2

1

10 –2

tf — ICE(L)

Collector photo current

I

CE(L) (mA)

VCC = 10V

Ta = 25˚C

10 4

10 3

10 2

10

1

10 –1

10

10 2

1

10 –2

Spectral sensitivity characteristics

100

80

60

40

20

Wavelength

λ (nm)

700

800

900

1000

1100

1200

0

600

VCE = 10V

Ta = 25˚C

VCE = 10V

T = 2856K

ICE(L) — Ta

10 2

1

10

Ambient temperature

Ta (˚C )

– 40

0

40

80

120

10 –1

ICEO — Ta

10 2

1

10 –1

10

Ambient temperature

Ta (˚C )

VCE = 10V

10 –2

– 20

0

40

80

20

60

100

PC — Ta

60

50

40

30

20

10

Ambient temperature

Ta (˚C )

0

20406080

100

0

– 20

ICE(L) — VCE

3.0

2.5

2.0

1.0

0.5

1.5

0

Collector to emitter voltage

V

CE (V)

020

16

812

424

Ta = 25˚C

T = 2856K

ICE(L) — L

10 2

10

1

Illuminance

L (lx)

10

10 2

10 3

10 –2

10 –1

1

VCE = 10V

Ta = 25˚C

T = 2856K

0˚

10˚

20˚

30˚

40˚

50˚

60˚

70˚

80˚

90˚

Directivity characteristics

20

90

100

80

70

60

50

40

30

500 lx

L = 1000 lx

100 lx

RL = 1kΩ

500

Ω

100

Ω

RL = 1kΩ

500

Ω

100

Ω

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