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M63800FP Datasheet(PDF) 1 Page - Mitsubishi Electric Semiconductor

Part No. M63800FP
Description  7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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Aug. 1999
PIN CONFIGURATION
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
DESCRIPTION
M63800FP is a seven-circuit output-sourcing Darlington
transistor array. The circuits are made of PNP and NPN tran-
sistors. This semiconductor integrated circuit performs high-
current driving with extremely low input-current supply.
FEATURES
High breakdown voltage (BVCEO
≥ 50V)
High-current driving (Io(max) = –500mA)
With output clamping diodes
Driving available with CMOS IC output of 6-16V or with TTL output
Wide operating temperature range (Ta = –20 to +75
°C)
Output current-sourcing type
APPLICATION
Drives of relays, printers, LEDs, fluorescent display tubes
and lamps, and interfaces between MOS-bipolar logic sys-
tems and relays, solenoids, or small motors
FUNCTION
The M63800FP has seven circuits, which are made of input
inverters and current-sourcing outputs. The outputs are
made of PNP transistors and NPN Darlington transistors.
The PNP transistor base current is constant. A spike-killer
clamping diode is provided between each output pin and
GND. VS (pin 8) and GND (pin 9) are used commonly among
the eight circuits.
The input has resistance of 3k
Ω, and a maximum of 10V can
be applied. The output current is 500mA maximum. Supply
voltage VS is 50V maximum.
The M63800FP is enclosed in a molded small flat package,
enabling space-saving design.
CIRCUIT DIAGRAM
–0.5 ~ +50
50
–0.5 ~ +10
–500
–500
50
1.00
–20 ~ +75
–55 ~ +125
# : Unused I/O pins must be connected to GND.
ABSOLUTE MAXIMUM RATINGS (Unless otherwise noted, Ta = –20 ~ +75
°C)
VCEO
#
VS
VI
IO
IF
VR
#
Pd
Topr
Tstg
Ratings
Symbol
Parameter
Conditions
Collector-emitter voltage
Supply voltage
Input voltage
Output current
Clamping diode forward current
Clamping diode reverse voltage
Power dissipation
Operating temperature
Storage temperature
Output, L
Current per circuit output, H
Ta = 25
°C, when mounted on board
1.5K
7.2K
3K
3K
20K
VS
GND
INPUT
OUTPUT
The diode, indicated with the dotted line, is parasitic, and cannot
be used.
Unit :
The seven circuits share the VS and GND.
1
IN1
IN2
IN3
IN4
IN5
IN6
IN7
GND
VS
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
→O7
→O6
→O5
→O4
→O3
→O2
→O1 
INPUT
OUTPUT
Package type 16P2N-A
V
V
V
mA
mA
V
W
°C
°C
Unit




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