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M63800FP Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor

Part No. M63800FP
Description  7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
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Maker  MITSUBISHI [Mitsubishi Electric Semiconductor]
Homepage  http://www.mitsubishichips.com
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M63800FP Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor

   
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Aug. 1999
MITSUBISHI SEMICONDUCTOR <TRANSISTOR ARRAY>
M63800FP
7-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
RECOMMENDED OPERATING CONDITIONS (Unless otherwise noted, Ta = –20 ~ +75
°C)
IS (leak) #
IS
VF
IR
#
5
0
2.4
0
V
V
V
50
10
0.2
IO
0
0
–350
–100
mA
VCE (sat)
II
100
2.4
2.0
1.0
5.0
15.0
–2.4
100
VS = 50V, VI = 0.2V
VS = 10V, VI = 2.4V, IO = –350mA
VS = 10V, VI = 2.4V, IO = –100mA
VI = 3V
VI = 10V
VS = 50V, VI = 3V (all input)
IF = –350mA
VR = 50V
Symbol
Unit
Parameter
Test conditions
Limits
min
typ+
max
1.6
1.45
0.6
2.9
5.6
–1.2
+ : The typical values are those measured under ambient temperature (Ta) of 25
°C. There is no guarantee that these values are obtained under any
conditions.
# : Unused I/O pins must be connected to GND.
µA
mA
V
µA
V
mA
VS
VIH
VIL
min
typ
max
Parameter
Limits
Symbol
Unit
Supply voltage
Output current
(Current per 1 cir-
cuit when 7 circuits
are coming on si-
multaneously)
“H” input voltage
“L” input voltage
Duty Cycle
no more than 40%
Duty Cycle
no more than 7%
ELECTRICAL CHARACTERISTICS (Unless otherwise noted, Ta = –20 ~ +75
°C)
Supply leak current
Supply current
Clamping diode forward voltage
Clamping diode reverse current
Collector-emitter saturation voltage
Input current
TIMING DIAGRAM
NOTE 1 TEST CIRCUIT
ns
ns
ton
toff
100
4800
Symbol
Unit
Parameter
Test conditions
Limits
min
typ
max
Turn-on time
Turn-off time
CL = 15pF (note 1)
SWITCHING CHARACTERISTICS (Unless otherwise noted, Ta = 25
°C)
ton
50%
50%
50%
50%
toff
INPUT
OUTPUT
PG
50
CL
RL
VS
INPUT
OUTPUT
(1) Pulse generator (PG) characteristics : PRR = 1kHz,
tw = 10
µs, tr = 6ns, tf = 6ns, ZO = 50Ω
VI = 0 to 2.4V
(2) Input-output conditions : RL = 30
Ω, VS = 10V
(3) Electrostatic capacity CL includes floating capacitance at
connections and input capacitance at probes
Measured device


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