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SI7483ADP Datasheet(PDF) 2 Page - Vishay Siliconix

Part No. SI7483ADP
Description  P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7483ADP Datasheet(HTML) 2 Page - Vishay Siliconix

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Si7483ADP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 73025
S-41525—Rev. A, 16-Aug-04
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
VGS(th)
VDS = VGS, ID = −250 mA
−1.0
−3.0
V
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = −30 V, VGS = 0 V
−1
mA
Zero Gate Voltage Drain Current
IDSS
VDS = −30 V, VGS = 0 V, TJ = 70_C
−10
mA
On-State Drain Currenta
ID(on)
VDS = −5 V, VGS = −10 V
−30
A
Drain Source On State Resistancea
rDS( )
VGS = −10 V, ID = −24 A
0.0047
0.0057
W
Drain-Source On-State Resistancea
rDS(on)
VGS = −4.5 V, ID = −17 A
0.0075
0.0095
W
Forward Transconductancea
gfs
VDS = −15 V, ID = −24 A
70
S
Diode Forward Voltagea
VSD
IS = −2.9 A, VGS = 0 V
−0.73
−1.1
V
Dynamicb
Total Gate Charge
Qg
120
180
Gate-Source Charge
Qgs
VDS = −15 V, VGS = −10 V, ID = −24 A
18
nC
Gate-Drain Charge
Qgd
33
Gate Resistance
Rg
1.6
3.2
4.8
W
Turn-On Delay Time
td(on)
22
35
Rise Time
tr
VDD = −15 V, RL = 15 W
33
50
Turn-Off Delay Time
td(off)
VDD = −15 V, RL = 15 W
ID ^ −1 A, VGEN = −10 V, Rg = 6 W
210
320
ns
Fall Time
tf
130
200
Source-Drain Reverse Recovery Time
trr
IF = −2.9 A, di/dt = 100 A/ms
70
130
Notes
a.
Pulse test; pulse width v 300 ms, duty cycle v 2%.
b.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0
10
20
30
40
50
60
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
10
20
30
40
50
60
0
1234
5
VGS = 10 thru 4 V
25_C
TC = 125_C
−55_C
Output Characteristics
Transfer Characteristics
VDS − Drain-to-Source Voltage (V)
VGS − Gate-to-Source Voltage (V)
3 V


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