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SI7483ADP Datasheet(PDF) 1 Page - Vishay Siliconix

Part No. SI7483ADP
Description  P-Channel 30-V (D-S) MOSFET
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Manufacturer  VISHAY [Vishay Siliconix]
Direct Link  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SI7483ADP Datasheet(HTML) 1 Page - Vishay Siliconix

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FEATURES
D TrenchFETr Power MOSFETS
D New Low Thermal Resistance PowerPAKr
Package with Low 1.07-mm Profile
D 100% Rg tested
APPLICATIONS
D Battery and Load Switching
− Notebook Computers
− Notebook Battery Packs
Si7483ADP
Vishay Siliconix
New Product
Document Number: 73025
S-41525—Rev. A, 16-Aug-04
www.vishay.com
1
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
ID (A)
30
0.0057 @ VGS = −10 V
−24
−30
0.0095 @ VGS = −4.5 V
−17
D
S
G
P-Channel MOSFET
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Ordering Information: Si7483ADP-T1—E3
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
VDS
−30
V
Gate-Source Voltage
VGS
"20
V
Continuous Drain Current (TJ = 150_C)a
TA = 25_C
ID
−24
−14
Continuous Drain Current (TJ = 150_C)a
TA = 70_C
ID
−19
−11
A
Pulsed Drain Current
IDM
−60
A
continuous Source Current (Diode Conduction)a
IS
−4.5
−1.6
Maximum Power Dissipationa
TA = 25_C
PD
5.4
1.9
W
Maximum Power Dissipationa
TA = 70_C
PD
3.4
1.2
W
Operating Junction and Storage Temperature Range
TJ, Tstg
−55 to 150
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Mi
J
ti
t A bi ta
t v 10 sec
R
18
23
Maximum Junction-to-Ambienta
Steady State
RthJA
50
65
_C/W
Maximum Junction-to-Case (Drain)
Steady State
RthJC
1.0
1.5
C/W
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.


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