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NLAS3158 Datasheet(PDF) 3 Page - ON Semiconductor

Part No. NLAS3158
Description  Low Voltage Dual SPDT Analog Switch Dual 2:1 Multiplexer
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Maker  ONSEMI [ON Semiconductor]
Homepage  http://www.onsemi.com
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NLAS3158 Datasheet(HTML) 3 Page - ON Semiconductor

 
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NLAS3158
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS (TA = −40°C to +85°C)
VCC
TA = +255C
TA = −405C to +855C
Symbol
Parameter
Test Conditions
VCC
(V)
Min
Typ
Max
Min
Max
Unit
VIH
HIGH Level
Input Voltage
1.65−1.95
2.3−5.5
0.75 VCC
0.7 VCC
V
VIL
LOW Level
Input Voltage
1.65−1.95
2.3−5.5
0.25 VCC
0.3 VCC
V
IIN
Input Leakage Current
0
v VIN v 5.5 V
0−5.5
"0.0
5
"0.1
"1
mA
IOFF
OFF State Leakage
Current
0
v A, B v VCC
1.65−5.5
"0.0
5
"0.1
"1
mA
RON
Switch On Resistance
(Note 3)
VIN = 0 V, IO = 30 mA
VIN = 2.4 V, IO = −30 mA
VIN = 4.5 V, IO = −30 mA
4.5
3.0
5.0
7.0
6.0
8.0
13
6.0
8.0
13
W
VIN = 0 V, IO = 24 mA
VIN = 3 V, IO = −24 mA
3.0
4.0
10
8.0
19
8.0
19
W
VIN = 0 V, IO = 8 mA
VIN = 2.3 V, IO = −8 mA
2.3
5.0
13
9.0
24
9.0
24
W
VIN = 0 V, IO = 4 mA
VIN = 1.65 V, IO = −4 mA
1.65
6.5
17
12
39
12
39
W
ICC
Quiescent Supply
Current
All Channels ON or
OFF
VIN = VCC or GND
IOUT = 0
5.5
1.0
10
mA
Analog Signal Range
VCC
0
VCC
0
VCC
V
RRANGE
On Resistance
Over Signal Range
(Note 3) (Note 7)
IA = −30 mA, 0 v VBn v VCC
IA = −24 mA, 0 v VBn v VCC
IA = −8 mA, 0 v VBn v VCC
IA = −4 mA, 0 v VBn v VCC
4.5
3.0
2.3
1.65
25
50
100
300
W
DRON
On Resistance Match
Between Channels
(Note 3) (Note 4)
(Note 5)
IA = −30 mA, VBn = 3.15
IA = −24 mA, VBn = 2.1
IA = −8 mA, VBn = 1.6
IA = −4 mA, VBn = 1.15
4.5
3.0
2.3
1.65
0.15
0.2
0.5
0.5
W
Rflat
On Resistance
Flatness (Note 3)
(Note 4) (Note 6)
IA = −30 mA, 0 v VBn v VCC
IA = −24 mA, 0 v VBn v VCC
IA = −8 mA, 0 v VBn v VCC
IA = −4 mA, 0 v VBn v VCC
5.0
3.3
2.5
1.8
5.0
10
24
110
W
3. Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lower
of the voltages on the two (A or B Ports).
4. Parameter is characterized but not tested in production.
5.
DRON = RON max − RON min measured at identical VCC, temperature and voltage levels.
6. Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.
7. Guaranteed by Design.


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