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KSA2690 Datasheet(PDF) 1 Page - Fairchild Semiconductor

Part No. KSA2690
Description  Audio Frequency High Frequency Power Amplifier
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Maker  FAIRCHILD [Fairchild Semiconductor]
Homepage  http://www.fairchildsemi.com
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KSA2690 Datasheet(HTML) 1 Page - Fairchild Semiconductor

   
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©2000 Fairchild Semiconductor International
Rev. A, February 2000
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings T
C=25°C unless otherwise noted
* PW
≤10ms, Duty Cycle≤50%
Electrical Characteristics T
C=25°C unless otherwise noted
* Pulse Test: PW
≤350µs, Duty Cycle≤2% Pulsed
hFE Classificntion
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
: KSC2690
: KSC2690A
120
160
V
V
VCEO
Collector- Emitter Voltage
: KSC2690
: KSC2690A
120
160
V
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current (DC)
1.2
A
ICP
*Collector Current (Pulse)
2.5
A
IB
Base Current(DC)
0.3
A
PC
Collector Dissipation (Ta=25°C)
1.2
W
PC
Collector Dissipation (TC=25°C)
20
W
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
- 55 ~ 150
°C
Symbol
Parameter
Test Condition
Min.
Typ.
Max.
Units
ICBO
Collector Cut-off Current
VCB = 120V, IE = 0
1
µA
IEBO
Emitter Cut-off Current
VEB = 3V, IC= 0
1
µA
hFE1
hFE2
* DC Current Gain
VCE = 5V, IC = 5mA
VCE = 5V, IC = 0.3A
35
60
105
140
320
VCE(sat)
* Collector-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
0.4
0.7
V
VBE(sat)
* Base-Emitter Saturation Voltage
IC = 1A, IB = 0.2A
1
1.3
V
fT
Current Gain Bandwidth Product
VCE = 5V, IC = 0.2A
155
MHz
Cob
Output Capacitance
VCB =10V, IE =0, f = 1MHz
19
pF
Classification
R
O
Y
hFE2
60 ~ 120
100 ~ 200
160 ~ 320
KSC2690/2690A
Audio Frequency
High Frequency Power Amplifier
• Complement to KSA1220/KSA1220A
1
TO-126
1. Emitter
2.Collector
3.Base


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