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DMTH4005SK3Q Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMTH4005SK3Q Datasheet(HTML) 2 Page - Diodes Incorporated |
2 / 7 page DMTH4005SK3Q Document number: DS38661 Rev. 2 - 2 2 of 7 www.diodes.com August 2016 © Diodes Incorporated DMTH4005SK3Q Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage VDSS 40 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current (Note 7) TC = +25°C (Note 10) TC = +100°C ID 95 A 73 Maximum Body Diode Forward Current (Note 7) TC = +25C IS 83 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM 150 A Avalanche Current, L=0.1mH IAS 32.5 A Avalanche Energy, L=0.1mH EAS 52.8 mJ Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 6) TA = +25°C PD 2.1 W Thermal Resistance, Junction to Ambient (Note 6) RθJA 38 °C/W Total Power Dissipation (Note 7) TC = +25°C PD 100 W Thermal Resistance, Junction to Case (Note 7) RθJC 1.5 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +175 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS 40 V VGS = 0V, ID = 1mA Zero Gate Voltage Drain Current IDSS 1 µA VDS = 32V, VGS = 0V Gate-Source Leakage IGSS ±100 nA VGS = ±20V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) 2 4 V VDS = VGS, ID = 250µA Static Drain-Source On-Resistance RDS(ON) 3.6 4.5 m Ω VGS = 10V, ID = 50A Diode Forward Voltage VSD 0.9 V VGS = 0V, IS = 50A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Ciss 3,062 pF VDS = 20V, VGS = 0V, f = 1MHz Output Capacitance Coss 902.2 Reverse Transfer Capacitance Crss 179.2 Gate Resistance RG 0.67 Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge Qg 49.1 nC VDD = 20V, ID = 50A, Gate-Source Charge Qgs 10.3 Gate-Drain Charge Qgd 13 Turn-On Delay Time tD(ON) 8.7 ns VDD = 20V, VGS = 10V, ID = 50A, RG = 3Ω Turn-On Rise Time tR 6.8 Turn-Off Delay Time tD(OFF) 18.6 Turn-Off Fall Time tF 7.3 Body Diode Reverse Recovery Time tRR 31.8 ns IF = 50A, di/dt = 100A/μs Body Diode Reverse Recovery Charge QRR 26.5 nC Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad layout. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 10. Package limited. |
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