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DMTH4011SPDQ Datasheet(PDF) 4 Page - Diodes Incorporated |
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DMTH4011SPDQ Datasheet(HTML) 4 Page - Diodes Incorporated |
4 / 7 page DMTH4011SPDQ Document number: DS39465 Rev. 3 - 2 4 of 7 www.diodes.com January 2018 © Diodes Incorporated DMTH4011SPDQ 0 0.01 0.02 0.03 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature V GS = 10V, ID = 20A 0 0.5 1 1.5 2 2.5 3 3.5 -50 -25 0 25 50 75 100 125 150 175 T J, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs. Temperature I D = 1mA I D = 250µA 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current V GS = 0V T J = -55 oC T J = 25 oC T J = 85 oC T J = 125 oC T J = 150 oC T J = 175 oC 1 10 100 1000 10000 0 5 10 15 20 25 30 35 40 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance f = 1MHz C iss C oss C rss 0 2 4 6 8 10 0 2 4 6 8 10 12 Q g (nC) Figure 11. Gate Charge V DS = 20V, ID = 20A 0.1 1 10 100 0.1 1 10 100 V DS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area T J(Max) = 175℃ T C = 25℃ Single Pulse DUT on Infinite Heatsink V GS = 10V R DS(ON) Limited P W = 1s P W = 100ms P W = 10ms P W = 1ms P W = 100µs P W = 10µs P W = 1µs |
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