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DMP2075UFDB-13 Datasheet(PDF) 2 Page - Diodes Incorporated |
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DMP2075UFDB-13 Datasheet(HTML) 2 Page - Diodes Incorporated |
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2 / 7 page  DMP2075UFDB Document number: DS40150 Rev. 2 - 2 2 of 7 www.diodes.com October 2017 © Diodes Incorporated DMP2075UFDB Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS -20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current (Note 5) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID -3.8 -3.0 A Maximum Continuous Body Diode Forward Current (Note 5) IS -1.0 A Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) IDM -25 A Avalanche Current (Note 7) L = 0.1mH IAS -13 A Avalanche Energy (Note 7) L = 0.1mH EAS 8.5 mJ Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) TA = +25°C PD 0.7 W Thermal Resistance, Junction to Ambient (Note 5) Steady State RθJA 178 °C/W Total Power Dissipation (Note 6) TA = +25°C PD 1.4 W Thermal Resistance, Junction to Ambient (Note 6) Steady State RθJA 92 °C/W Thermal Resistance, Junction to Case (Note 6) RθJC 22 Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BVDSS -20 — — V VGS = 0V, ID = -250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — -1.0 μA VDS = -20V, VGS = 0V Gate-Source Leakage IGSS — — ±10 μA VGS = ±8V, VDS = 0V ON CHARACTERISTICS (Note 8) Gate Threshold Voltage VGS(TH) -0.35 — -1.4 V VDS = VGS, ID = -250μA Static Drain-Source On-Resistance RDS(ON) — 53 75 m Ω VGS = -4.5V, ID = -2.9A — 64 137 VGS = -2.5V, ID = -2.3A Diode Forward Voltage VSD — -0.7 -1.2 V VGS = 0V, IS = -3.0A DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance CISS — 642 — pF VDS = -10V, VGS = 0V, f = 1.0MHz Output Capacitance COSS — 98 — pF Reverse Transfer Capacitance CRSS — 87 — pF Gate Resistance Rg — 26.5 — Ω VDS = 0V, VGS = 0V, f = 1MHz Total Gate Charge (VGS = -4.5V) Qg — 8.8 — nC VDS = -10V, ID = -3.7A Total Gate Charge (VGS = -8V) — 0.9 — nC Gate-Source Charge Qgs — 2.9 — nC Gate-Drain Charge Qgd — 5.5 — nC Turn-On Delay Time tD(ON) — 22.6 — ns VDD = -10V, VGS = -4.5V, RL = 3.3Ω, Rg = 1Ω Turn-On Rise Time tR — 34.1 — ns Turn-Off Delay Time tD(OFF) — 34.3 — ns Turn-Off Fall Time tF — 13 — ns Body Diode Reverse Recovery Time tRR — 3.3 — ns IS = -3.0A, dI/dt = 100A/μs Body Diode Reverse Recovery Charge QRR — 642 — nC IS = -3.0A, dI/dt = 100A/μs Notes: 5. Device mounted on on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 6. Short duration pulse test used to minimize self-heating effect 7. IAS and EAS ratings are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. |
Similar Part No. - DMP2075UFDB-13 |
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Similar Description - DMP2075UFDB-13 |
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