DMT8012LPS-13 datasheet(3/7 Pages) DIODES

Part #	DMT8012LPS-13

Description	80V N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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3 / 7 page

DMT8012LPS

Document number: DS37738 Rev. 4 - 2

3 of 7

www.diodes.com

July 2017

DMT8012LPS

0.0

5.0

10.0

15.0

20.0

25.0

30.0

0

0.5

1

1.5

2

2.5

3

V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 1. Typical Output Characteristic

V

GS=3.5V

V

GS=4.0V

V

GS=10.0V

V

GS=6.0V

V

GS=5.0V

V

GS=4.5V

0

5

10

15

20

25

30

1

2

3

4

5

V

GS, GATE-SOURCE VOLTAGE (V)

Figure 2. Typical Transfer Characteristic

V

DS= 5.0V

-55

℃

25

℃

85

℃

125

℃

150

℃

0.005

0.01

0.015

0.02

0.025

0.03

0

5

10

15

20

25

30

I

D, DRAIN CURRENT (A)

Figure 5. Typical On-Resistance vs Drain Current and

Temperature

V

GS=10V

-55

℃

25

℃

85

℃

125

℃

150

℃

0.5

0.7

0.9

1.1

1.3

1.5

1.7

1.9

2.1

2.3

2.5

-50

-25

0

25

50

75

100

125

150

T

J, JUNCTION TEMPERATURE (℃)

Figure 6. On-Resistance Variation with Temperature

V

GS=10V, ID=20A

V

GS=4.5V, ID=20A

0.01

0.015

0.02

0.025

0.03

2

4

6

8

10

12

14

16

18

20

V

GS, GATE-SOURCE VOLTAGE (V)

Figure 4. Typical Transfer Characteristic

I

D=12A

I

D=6A

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0

5

10

15

20

25

30

I

D, DRAIN-SOURCE CURRENT (A)

Figure 3. Typical On-Resistance vs. Drain Current and

Gate Voltage

V

GS = 10.0V

V

GS = 4.5V

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