DMT69M8LSS_17 datasheet(4/7 Pages) DIODES

Part #	DMT69M8LSS

Description	60V N-CHANNEL ENHANCEMENT MODE MOSFET

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Manufacturer	DIODES [Diodes Incorporated]

Direct Link	http://www.diodes.com

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4 / 7 page

DMT69M8LSS

Document number: DS38325 Rev. 3 - 2

4 of 7

www.diodes.com

February 2017

DMT69M8LSS

0

0.004

0.008

0.012

0.016

0.02

-50

-25

0

25

50

75

100

125

150

T

J, JUNCTION TEMPERATURE (℃)

Figure 7. On-Resistance Variation with Junction

Temperature

V

GS = 10V, ID = 13.5A

V

GS = 4.5V, ID = 11.5A

0.4

0.8

1.2

1.6

2

-50

-25

0

25

50

75

100

125

150

T

J, JUNCTION TEMPERATURE (℃)

Figure 8. Gate Threshold Variation vs. Junction

Temperature

I

D = 250µA

I

D = 1mA

0

5

10

15

20

25

30

0

0.3

0.6

0.9

1.2

1.5

V

SD, SOURCE-DRAIN VOLTAGE (V)

Figure 9. Diode Forward Voltage vs. Current

T

J = 125

oC

T

J = 150

oC

T

J = 85

oC

T

J = 25

oC

T

J = -55

oC

V

GS = 0V

10

100

1000

10000

0

5

10

15

20

25

30

V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 10. Typical Junction Capacitance

f = 1MHz

C

rss

C

oss

C

iss

0

2

4

6

8

10

0

7

14

21

28

35

Q

g (nC)

Figure 11. Gate Charge

V

DS = 30V, ID = 13.5A

0.01

0.1

1

10

100

0.01

0.1

1

10

100

V

DS, DRAIN-SOURCE VOLTAGE (V)

Figure 12. SOA, Safe Operation Area

P

W =10s

P

W =10ms

P

W =100µs

DC

R

DS(ON) Limited

P

W =1ms

P

W =100ms

T

J(Max) = 150℃ TC = 25℃

Single Pulse

DUT on 1*MRP Board

V

GS= 10V

P

W =1s

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