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DMT68M8LSS Datasheet(PDF) 4 Page - Diodes Incorporated

Part # DMT68M8LSS
Description  60V N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMT68M8LSS Datasheet(HTML) 4 Page - Diodes Incorporated

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DMT68M8LSS
Document number: DS39396 Rev. 2 - 2
4 of 7
www.diodes.com
May 2017
© Diodes Incorporated
DMT68M8LSS
0
0.005
0.01
0.015
0.02
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 7. On-Resistance Variation with Junction
Temperature
V
GS = 10V, ID = 13.5A
V
GS = 4.5V, ID = 11.5A
0
5
10
15
20
25
30
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
T
J = 125
oC
T
J= 85
oC
T
J = 25
oC
T
J = -55
oC
V
GS = 0V
T
J = 150
oC
1
10
100
1000
10000
0
10
20
30
40
50
60
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
f=1MHz
C
rss
C
oss
C
iss
0
2
4
6
8
10
0
5
10
15
20
25
30
35
Qg (nC)
Figure 11. Gate Charge
V
DS = 30V, ID = 20A
0.01
0.1
1
10
100
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
P
W =10s
P
W =10ms
P
W =100µs
DC
R
DS(ON) Limited
P
W =1ms
P
W =100ms
T
J(Max) = 150℃ TC = 25℃
Single Pulse
DUT on 1*MRP Board
V
GS= 10V
P
W =1s
0.6
0.8
1
1.2
1.4
1.6
1.8
2
-50
-25
0
25
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (℃)
Figure 8. Gate Threshold Variation vs. Junction
Temperature
I
D = 250μA
I
D = 1mA


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