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S30K60T Datasheet(PDF) 1 Page - Thinki Semiconductor Co., Ltd.

Part # S30K60T
Description  30Amperes,600Volts Single Fast Recovery Epitaxial Diode
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Manufacturer  THINKISEMI [Thinki Semiconductor Co., Ltd.]
Direct Link  http://www.thinkisemi.com
Logo THINKISEMI - Thinki Semiconductor Co., Ltd.

S30K60T Datasheet(HTML) 1 Page - Thinki Semiconductor Co., Ltd.

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TO-247-2L
Pb Free Plating Product
S30K60T
30Amperes,600Volts Single Fast Recovery Epitaxial Diode
Pb
Internal Configuration
Cathode(Bottom Side Metal Heatsink)
Cathode
Anode
Base Backside
·
Ultrafast Recovery Time
·
Soft Recovery Characteristics
·
Low Recovery Loss
·
Low Forward Voltage
·
High Surge Current Capability
·
Low Leakage Current
APPLICATION
GENERAL DESCRIPTION
· Freewheeling, Snubber, Clamp
· Inversion Welder
· PFC
· Plating Power Supply
· Ultrasonic Cleaner and Welder
· Converter & Chopper
· UPS
PRODUCT FEATURE
S30K60T using the lastest FRED FAB process(planar passivation pellet) with ultrafast and soft recovery characteristics.
ABSOLUTE MAXIMUM RATINGS
TC=25°C unless otherwise specified
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
Symbol
Parameter
Test Conditions
Values
Unit
VR
Maximum D.C. Reverse Voltage
600
V
VRRM
Maximum Repetitive Reverse Voltage
600
V
IF(AV)
Average Forward Current
TC=110°C, Per Diode
30
A
IF(RMS)
RMS Forward Current
TC=110°C, Per Diode
42
A
IFSM
Non-Repetitive Surge Forward Current
TJ=45°C, t=10ms, 50Hz, Sine
300
A
PD
Power Dissipation
156
W
TJ
Junction Temperature
-40 to +150
°C
TSTG
Storage Temperature Range
-40 to +150
°C
Torque
Module-to-Sink
Recommended(M3)
1.1
N·m
RθJC
Thermal Resistance
Junction-to-Case
0.8
°C /W
Weight
6.0
g
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VR=600V
--
--
15
µA
IRM
Reverse Leakage Current
VR=600V, TJ=125°C
--
--
250
µA
IF
VF
Forward Voltage
IF=30A, TJ=125°C
--
1.65
--
V
trr
Reverse Recovery Time
IF=1A, VR=30V, diF/dt=-200A/μs
--
22
--
ns
trr
Reverse Recovery Time
--
35
--
ns
IRRM
Max. Reverse Recovery Current
VR=300V, IF=30A
diF/dt=-200A/μs, TJ=25°C
--
2.5
--
A
trr
Reverse Recovery Time
--
110
--
ns
IRRM
Max. Reverse Recovery Current
VR=300V, IF=30A
diF/dt=-200A/μs, TJ=125°C
--
7.0
--
A
S30K60T
=30A
1.3
1.7
2.1
V
© 1995 Thinki Semiconductor Co., Ltd.
http://www.thinkisemi.com.tw/
Page 1/3
Rev.08T


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