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FAN53611AUC135X Datasheet(PDF) 3 Page - ON Semiconductor |
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FAN53611AUC135X Datasheet(HTML) 3 Page - ON Semiconductor |
3 / 16 page www.onsemi.com 3 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Min. Max. Units VIN Input Voltage -0.3 7.0 V VSW Voltage on SW Pin -0.3 VIN + 0.3 (3) V VCTRL EN and MODE Pin Voltage -0.3 VIN + 0.3 (3) V Other Pins -0.3 VIN + 0.3 (3) V ESD Electrostatic Discharge Protection Level Human Body Model per JESD22-A114 2.0 kV Charged Device Model per JESD22-C101 1.5 TJ Junction Temperature -40 +150 °C TSTG Storage Temperature -65 +150 °C TL Lead Soldering Temperature, 10 Seconds +260 °C Note: 3. Lesser of 7 V or VIN+0.3 V. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. ON Semiconductor does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol Parameter Min. Typ. Max. Units VCC Supply Voltage Range 2.3 5.5 V IOUT Output Current for FAN53601 0 600 mA Output Current for FAN53611 0 1 A L Inductor 470 nH CIN Input Capacitor 2.2 µF COUT Output Capacitor 1.6 4.7 12.0 µF TA Operating Ambient Temperature -40 +85 °C TJ Operating Junction Temperature -40 +125 °C Thermal Properties Junction-to-ambient thermal resistance is a function of application and board layout. This data is measured w ith four-layer 2s2p boards in accordance to JEDEC standard JESD51. Special attention must be paid to not exceed junction temperature TJ(max) at a given ambient temperature TA. Symbol Parameter Typical Unit θJA Junction-to-Ambient Thermal Resistance 125 °C/W |
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