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TC55W800FT-55 Datasheet(PDF) 5 Page - Toshiba Semiconductor

Part No. TC55W800FT-55
Description  524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
Download  13 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TC55W800FT-55 Datasheet(HTML) 5 Page - Toshiba Semiconductor

 
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TC55W800FT-55,-70
2001-10-03
5/13
AC CHARACTERISTICS AND OPERATING CONDITIONS
(Ta
==== ----40° to 85°C, VDD ==== 2.7 to 3.3 V)
READ CYCLE
TC55W800FT
-55
-70
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
tRC
Read Cycle Time
55
¾
70
¾
tACC
Address Access Time
¾
55
¾
70
tCO1
Chip Enable(
1
CE
) Access Time
¾
55
¾
70
tCO2
Chip Enable(CE2) Access Time
¾
55
¾
70
tOE
Output Enable Access Time
¾
30
¾
35
tBA
Data Byte Control Access Time
¾
30
¾
35
tCOE
Chip Enable Low to Output Active
5
¾
5
¾
tOEE
Output Enable Low to Output Active
0
¾
0
¾
tBE
Data Byte Control Low to Output Active
0
¾
0
¾
tOD
Chip Enable High to Output High-Z
¾
25
¾
30
tODO
Output Enable High to Output High-Z
¾
25
¾
30
tBD
Data Byte Control High to Output High-Z
¾
25
¾
30
tOH
Output Data Hold Time
10
¾
10
¾
ns
WRITE CYCLE
TC55W800FT
-55
-70
SYMBOL
PARAMETER
MIN
MAX
MIN
MAX
UNIT
tWC
Write Cycle Time
55
¾
70
¾
tWP
Write Pulse Width
45
¾
50
¾
tCW
Chip Enable to End of Write
50
¾
60
¾
tBW
Data Byte Control to End of Write
45
¾
50
¾
tAS
Address Setup Time
0
¾
0
¾
tWR
Write Recovery Time
0
¾
0
¾
tODW
R/W Low to Output High-Z
¾
25
¾
30
tOEW
R/W High to Output Active
0
¾
0
¾
tDS
Data Setup Time
25
¾
30
¾
tDH
Data Hold Time
0
¾
0
¾
ns
AC TEST CONDITIONS
PARAMETER
TEST CONDITION
Output load
30 pF
+ 1 TTL Gate
Input pulse level
0.4 V, 2.4 V
Timing measurements
VDD ´ 0.5
Reference level
VDD ´ 0.5
tR, tF
5 ns


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