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TC55W800FT-55 Datasheet(PDF) 4 Page - Toshiba Semiconductor

Part No. TC55W800FT-55
Description  524,288-WORD BY 16-BIT/1,048,576-WORD BY 8-BIT FULL CMOS STATIC RAM
Download  13 Pages
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Maker  TOSHIBA [Toshiba Semiconductor]
Homepage  http://www.semicon.toshiba.co.jp/eng
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TC55W800FT-55 Datasheet(HTML) 4 Page - Toshiba Semiconductor

 
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TC55W800FT-55,-70
2001-10-03
4/13
DC CHARACTERISTICS (Ta
==== ----40° to 85°C, VDD ==== 2.3 to 3.3 V)
SYMBOL
PARAMETER
TEST CONDITION
MIN
TYP
MAX
UNIT
IIL
Input Leakage
Current
VIN = 0 V~VDD
¾
¾
±1.0
mA
IOH
Output High Current
VOH = VDD - 0.5 V
-0.5
¾
¾
mA
IOL
Output Low Current
VOL = 0.4 V
2.1
¾
¾
mA
ILO
Output Leakage
Current
1
CE
= VIH or CE2 = VIL or R/W = VIL or OE = VIH,
VOUT = 0 V~VDD
¾
¾
±1.0
mA
55 ns
¾
¾
60
70 ns
¾
¾
50
lDDO1
1
CE
= VIL and CE2 = VIH and
R/W
= VIH, IOUT = 0 mA,
Other Input
= VIH/VIL,
BYTE
= VDD or 0 V
tcycle
1
ms
¾
¾
10
mA
55 ns
¾
¾
55
70 ns
¾
¾
45
lDDO2
Operating Current
1
CE
= 0.2 V and CE2 = VDD - 0.2 V and
R/W
= VDD - 0.2 V, IOUT = 0 mA,
Other Input
= VDD - 0.2 V/0.2 V,
BYTE
= VDD or 0 V
tcycle
1
ms
¾
¾
5
mA
IDDS1
1
CE
= VIH or CE2 = VIL, BYTE = VDD or 0 V
¾
¾
2
mA
Ta
= 25°C
¾
¾
1
VDD =
3.0 V
± 10%
Ta
= -40~85°C
¾
¾
10
Ta
= 25°C
¾
0.05
0.5
Ta
= -40~40°C
¾
¾
1
IDDS2
(Note)
Standby Current
1
CE
= VDD - 0.2 V
or CE2
= 0.2 V,
VDD = 1.5 V~3.3 V,
BYTE
= VDD or 0 V
VDD = 3.0 V
Ta
= -40~85°C
¾
¾
5
mA
Note:
In standby mode with
1
CE
³ VDD - 0.2 V, these limits are assured for the condition CE2 ³ VDD - 0.2 V or CE2 £ 0.2 V.
CAPACITANCE (Ta
==== 25°C, f ==== 1 MHz)
SYMBOL
PARAMETER
TEST CONDITION
MAX
UNIT
CIN
Input Capacitance
VIN = GND
10
pF
COUT
Output Capacitance
VOUT = GND
10
pF
Note:
This parameter is periodically sampled and is not 100% tested.


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