SI4924DY datasheet(2/7 Pages) VISHAY

Part #	SI4924DY

Description	Asymetrical Dual N-Channel 30-V (D-S) MOSFET

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Manufacturer	VISHAY [Vishay Siliconix]

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Si4924DY

Vishay Siliconix

www.vishay.com

2

Document Number: 71163

S-03950—Rev. B, 26-May-03

MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Condition

Min

Typa

Max

Unit

Static

Gate Threshold Voltage

VGS( h)

VDS = VGS ID = 250 mA

Ch-1

0.8

V

Gate Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

Ch 1

Ch-2

0.8

V

Gate Body Leakage

IGSS

VDS = 0 V VGS = "20 V

Ch-1

"100

nA

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

Ch 1

Ch-2

"100

nA

VDS = 24 V VGS = 0 V

Ch-1

1

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V, VGS = 0 V

Ch 1

Ch-2

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 24 V VGS = 0 V TJ = 85_C

Ch-1

15

mA

VDS = 24 V, VGS = 0 V, TJ = 85_C

Ch 1

Ch-2

15

On State Drain Currentb

ID( )

VDS = 5 V VGS = 10 V

Ch-1

20

A

On-State Drain Currentb

ID(on)

VDS = 5 V, VGS = 10 V

Ch 1

Ch-2

30

A

VGS = 10 V, ID = 6.3 A

Ch-1

0.018

0.022

Drain Source On State Resistanceb

rDS( )

VGS = 10 V, ID = 11.5 A

Ch 1

Ch-2

0.0088

0.0105

W

Drain-Source On-State Resistanceb

rDS(on)

VGS = 4.5 V, ID = 5.4 A

Ch-1

0.024

0.030

W

VGS = 4.5 V, ID = 10 A

Ch 1

Ch-2

0.0115

0.0145

Forward Transconductanceb

gf

VDS = 15 V, ID = 6.3 A

Ch-1

17

S

Forward Transconductanceb

gfs

VDS = 15 V, ID = 11.5 A

Ch 1

Ch-2

30

S

Diode Forward Voltageb

VSD

IS = 1.3 A, VGS = 0 V

Ch-1

0.7

1.1

V

Diode Forward Voltageb

VSD

IS = 2.2 A, VGS = 0 V

Ch 1

Ch-2

0.72

1.1

V

Dynamica

Total Gate Charge

Q

Ch-1

8.0

12

Total Gate Charge

Qg

Channel-1

Ch 1

Ch-2

25.5

35

Gate Source Charge

Q

Channel-1

VDS = 15 V, VGS = 5 V, ID = 6.3 A

Ch-1

1.75

nC

Gate-Source Charge

Qgs

Channel-2

Ch 1

Ch-2

4.5

nC

Gate Drain Charge

Q d

Channel 2

VDS = 15 V, VGS = 5 V, ID = - 11.5 A

Ch-1

3.2

Gate-Drain Charge

Qgd

Ch 1

Ch-2

11.5

Gate Resistance

R

Ch-1

1.5

6.1

W

Gate Resistance

Rg

Ch 1

Ch-2

0.5

2.4

W

Turn On Delay Time

td( )

Ch-1

10

20

Turn-On Delay Time

td(on)

Ch

l 1

Ch 1

Ch-2

15

30

Rise Time

t

Channel-1

VDD = 15 V, RL = 15 W

Ch-1

5

10

Rise Time

tr

VDD = 15 V, RL = 15 W

ID ^ 1 A, VGEN = 10 V, RG = 6 W

Ch 1

Ch-2

11

20

Turn Off Delay Time

td( ff)

Channel-2

Ch-1

26

50

ns

Turn-Off Delay Time

td(off)

Channel 2

VDD = 15 V, RL = 15 W

ID ^ 1 A VGEN = 10 V RG = 6 W

Ch 1

Ch-2

58

100

ns

Fall Time

tf

ID ^ 1 A, VGEN = 10 V, RG = 6 W

Ch-1

8

16

Fall Time

tf

Ch 1

Ch-2

53

100

Source Drain Reverse Recovery Time

t

IF = 1.3 A, di/dt = 100 A/ms

Ch-1

30

60

Source-Drain Reverse Recovery Time

trr

IF = 2.2 A, di/dt = 100 mA/ms

Ch 1

Ch-2

42

70

Notes

a.

Guaranteed by design, not subject to production testing.

b.

Pulse test; pulse width

v 300 ms, duty cycle v 2%.

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