Electronic Components Datasheet Search |
|
SI4924DY Datasheet(PDF) 2 Page - Vishay Siliconix |
|
SI4924DY Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 7 page Si4924DY Vishay Siliconix www.vishay.com 2 Document Number: 71163 S-03950—Rev. B, 26-May-03 MOSFET SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Test Condition Min Typa Max Unit Static Gate Threshold Voltage VGS( h) VDS = VGS ID = 250 mA Ch-1 0.8 V Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250 mA Ch 1 Ch-2 0.8 V Gate Body Leakage IGSS VDS = 0 V VGS = "20 V Ch-1 "100 nA Gate-Body Leakage IGSS VDS = 0 V, VGS = "20 V Ch 1 Ch-2 "100 nA VDS = 24 V VGS = 0 V Ch-1 1 Zero Gate Voltage Drain Current IDSS VDS = 24 V, VGS = 0 V Ch 1 Ch-2 1 mA Zero Gate Voltage Drain Current IDSS VDS = 24 V VGS = 0 V TJ = 85_C Ch-1 15 mA VDS = 24 V, VGS = 0 V, TJ = 85_C Ch 1 Ch-2 15 On State Drain Currentb ID( ) VDS = 5 V VGS = 10 V Ch-1 20 A On-State Drain Currentb ID(on) VDS = 5 V, VGS = 10 V Ch 1 Ch-2 30 A VGS = 10 V, ID = 6.3 A Ch-1 0.018 0.022 Drain Source On State Resistanceb rDS( ) VGS = 10 V, ID = 11.5 A Ch 1 Ch-2 0.0088 0.0105 W Drain-Source On-State Resistanceb rDS(on) VGS = 4.5 V, ID = 5.4 A Ch-1 0.024 0.030 W VGS = 4.5 V, ID = 10 A Ch 1 Ch-2 0.0115 0.0145 Forward Transconductanceb gf VDS = 15 V, ID = 6.3 A Ch-1 17 S Forward Transconductanceb gfs VDS = 15 V, ID = 11.5 A Ch 1 Ch-2 30 S Diode Forward Voltageb VSD IS = 1.3 A, VGS = 0 V Ch-1 0.7 1.1 V Diode Forward Voltageb VSD IS = 2.2 A, VGS = 0 V Ch 1 Ch-2 0.72 1.1 V Dynamica Total Gate Charge Q Ch-1 8.0 12 Total Gate Charge Qg Channel-1 Ch 1 Ch-2 25.5 35 Gate Source Charge Q Channel-1 VDS = 15 V, VGS = 5 V, ID = 6.3 A Ch-1 1.75 nC Gate-Source Charge Qgs Channel-2 Ch 1 Ch-2 4.5 nC Gate Drain Charge Q d Channel 2 VDS = 15 V, VGS = 5 V, ID = - 11.5 A Ch-1 3.2 Gate-Drain Charge Qgd Ch 1 Ch-2 11.5 Gate Resistance R Ch-1 1.5 6.1 W Gate Resistance Rg Ch 1 Ch-2 0.5 2.4 W Turn On Delay Time td( ) Ch-1 10 20 Turn-On Delay Time td(on) Ch l 1 Ch 1 Ch-2 15 30 Rise Time t Channel-1 VDD = 15 V, RL = 15 W Ch-1 5 10 Rise Time tr VDD = 15 V, RL = 15 W ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch 1 Ch-2 11 20 Turn Off Delay Time td( ff) Channel-2 Ch-1 26 50 ns Turn-Off Delay Time td(off) Channel 2 VDD = 15 V, RL = 15 W ID ^ 1 A VGEN = 10 V RG = 6 W Ch 1 Ch-2 58 100 ns Fall Time tf ID ^ 1 A, VGEN = 10 V, RG = 6 W Ch-1 8 16 Fall Time tf Ch 1 Ch-2 53 100 Source Drain Reverse Recovery Time t IF = 1.3 A, di/dt = 100 A/ms Ch-1 30 60 Source-Drain Reverse Recovery Time trr IF = 2.2 A, di/dt = 100 mA/ms Ch 1 Ch-2 42 70 Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. |
Similar Part No. - SI4924DY |
|
Similar Description - SI4924DY |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.COM |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Datasheet Upload | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |