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CY15B104QSN Datasheet(PDF) 1 Page - Cypress Semiconductor |
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CY15B104QSN Datasheet(HTML) 1 Page - Cypress Semiconductor |
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1 / 90 page  PRELIMINARY CY15B104QSN CY15V104QSN Excelon™-Ultra 4-Mbit (512K × 8) Quad SPI F-RAM Cypress Semiconductor Corporation • 198 Champion Court • San Jose , CA 95134-1709 • 408-943-2600 Document Number: 002-18293 Rev. *E Revised March 1, 2018 Excelon™-Ultra 4-Mbit (512K × 8) Quad SPI F-RAM Features ■ 4-Mbit ferroelectric random access memory (F-RAM) logically organized as 512K × 8 ❐ Virtually unlimited endurance of 100 trillion (1014) read/write cycles ❐ 151-year data retention (See Data Retention and Endurance on page 75) ❐ NoDelay™ writes ❐ Advanced high-reliability ferroelectric process ■ Single and multi I/O serial peripheral interface (SPI) ❐ Serial bus interface SPI protocols ❐ Supports SPI mode 0 (0, 0) and mode 3 (1, 1) for all SDR mode transfers ❐ Extended I/O SPI protocols ❐ Dual SPI (DPI) protocols ❐ Quad SPI (QPI) protocols ■ SPI clock frequency ❐ Up to 108-MHz frequency SPI Single Data Rate (SDR) ■ Execute-in-place (XIP) ■ Write protection, data security, and data integrity ■ Hardware protection using the Write Protect (WP) pin ■ Software block protection ■ Embedded error correction code (ECC) and cyclic redundancy check (CRC) for enhanced data integrity ❐ ECC detects and corrects 1-bit error. If a 2-bit error occurs, it does not correct but reports through the ECC Status register ❐ CRC detects any accidental change to raw data ■ Extended electronic signatures ❐ Device ID includes manufacturer ID and product ID ❐ Unique ID ❐ User writable Serial Number ■ Dedicated 256-byte special sector F-RAM ❐ Dedicated special sector write and read ❐ Content can survive up to three standard reflow cycles ■ Low-power consumption at high speed ❐ 10 mA (typ) active current for 108 MHz SPI SDR ❐ 16 mA (typ) active current for 108 MHz QSPI SDR ❐ 102 µA (typ) standby current ❐ 0.70 µA (typ) deep power down mode current ❐ 0.1 µA (typ) hibernate mode current ■ Low-voltage operation: ❐ CY15V104QSN: VDD = 1.71 V to 1.89 V ❐ CY15B104QSN: VDD = 1.8 V to 3.6 V ■ Operating temperature: –40 °C to +85 °C ■ Packages ❐ 8-pin Small Outline Integrated Circuit (SOIC) package ❐ 8-pin Grid-Array Quad Flat No-Lead (GQFN) package ■ Restriction of hazardous substances (RoHS) compliant Functional Description The Excelon-Ultra CY15x104QSN is a high-performance, 4-Mbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash and other nonvolatile memories. Unlike serial flash, the CY15x104QSN performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other nonvolatile memories. The CY15x104QSN is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the CY15x104QSN ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash can cause data loss. The CY15x104QSN combines a 4-Mbit F-RAM with the high-speed Quad SPI (QPI) single data rate (SDR) interface which enhances the nonvolatile write capability of F-RAM technology. The device incorporates a read-only Device ID and Unique ID features which allow the SPI bus master to determine the manufacturer, product density, product revision and unique ID for each part. The device is also offered with a unique serial number that is read-only and can be used to identify a board or a system. The device supports on-die ECC logic which can detect and correct 1-bit error in every 8-byte data unit. The device also extends capability to report 2-bit error in unit data. The CY15x104QSN also supports the Cyclic Redundancy Check (CRC) feature which can be used to check the data integrity of the stored data in the memory array. The device specifications are guaranteed over industrial temperature range of –40 °C to +85 °C. |
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