RN4911

2001-06-07

1

TOSHIBA Transistor

Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)

RN4911

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

l Includeing two devices in US6 (ultra super mini type with 6 leads)

l With built-in bias resistors

l Simplify circuit design

l Reduce a quantity of parts and manufacturing process

Equivalent Circuit and Bias Resister Values

R1: 10kΩ

(Q1, Q2 Common)

°°°°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

−50

V

Collector-emitter voltage

−50

V

Emitter-base voltage

−5

V

Collector current

−100

mA

°°°°C)

Characteristic

Symbol

Rating

Unit

Collector-base voltage

50

V

Collector-emitter voltage

50

V

Emitter-base voltage

5

V

Collector current

100

mA

JEDEC

―

EIAJ

―

TOSHIBA

2-2J1A

Weight: 6.8mg

Unit: mm