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DMN2450UFB4 Datasheet(PDF) 3 Page - Diodes Incorporated |
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DMN2450UFB4 Datasheet(HTML) 3 Page - Diodes Incorporated |
3 / 7 page DMN2450UFB4 Document number: DS40239 Rev. 2 - 2 3 of 7 www.diodes.com February 2018 © Diodes Incorporated DMN2450UFB4 Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±12 V Continuous Drain Current (Note 6) VGS = 4.5V Steady State TA = +25°C TA = +70°C ID 1.0 0.8 A Pulsed Drain Current (10 μs Pulse, Duty Cycle = 1%) IDM 3.0 A Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) PD 0.5 W Thermal Resistance, Junction to Ambient (Note 5) RθJA 225 °C/W Total Power Dissipation (Note 6) PD 0.9 W Thermal Resistance, Junction to Ambient (Note 6) RθJA 129 °C/W Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BVDSS 20 - - V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS - - 100 nA VDS = 20V, VGS = 0V Gate-Source Leakage IGSS - - ±1.0 µA VGS = ±4.5V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage VGS(TH) 0.5 - 0.9 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) - 0.3 0.4 Ω VGS = 4.5V, ID = 600mA - 0.4 0.5 VGS = 2.5V, ID = 500mA - 0.5 0.7 VGS = 1.8V, ID = 350mA Diode Forward Voltage VSD - 0.7 1.2 V VGS = 0V, IS = 150mA, DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Ciss - 56 - pF VDS =16V, VGS = 0V, f = 1.0MHz Output Capacitance Coss - 19 - pF Reverse Transfer Capacitance Crss - 7.3 - pF Gate Resistance Rg - 86 - Ω VDS = 0V, VGS = 0V, Total Gate Charge (VGS = 4.5V) Qg - 0.6 - nC VDS = 10V, ID = 250mA Total Gate Charge (VGS = 10V) Qg - 1.3 - nC Gate-Source Charge Qgs - 0.1 - nC Gate-Drain Charge Qgd - 0.16 - nC Turn-On Delay Time tD(ON) - 5.3 - ns VDD = 10V, VGS = 4.5V, RL = 47Ω, Rg = 10Ω, ID = 200mA Turn-On Rise Time tR - 2.6 - ns Turn-Off Delay Time tD(OFF) - 18.1 - ns Turn-Off Fall Time tF - 6.6 - ns Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. |
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