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DMN2450UFB4 Datasheet(PDF) 3 Page - Diodes Incorporated

Part # DMN2450UFB4
Description  N-CHANNEL ENHANCEMENT MODE MOSFET
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Manufacturer  DIODES [Diodes Incorporated]
Direct Link  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMN2450UFB4 Datasheet(HTML) 3 Page - Diodes Incorporated

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DMN2450UFB4
Document number: DS40239 Rev. 2 - 2
3 of 7
www.diodes.com
February 2018
© Diodes Incorporated
DMN2450UFB4
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±12
V
Continuous Drain Current (Note 6) VGS = 4.5V
Steady
State
TA = +25°C
TA = +70°C
ID
1.0
0.8
A
Pulsed Drain Current (10
μs Pulse, Duty Cycle = 1%)
IDM
3.0
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Total Power Dissipation (Note 5)
PD
0.5
W
Thermal Resistance, Junction to Ambient (Note 5)
RθJA
225
°C/W
Total Power Dissipation (Note 6)
PD
0.9
W
Thermal Resistance, Junction to Ambient (Note 6)
RθJA
129
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
BVDSS
20
-
-
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
-
-
100
nA
VDS = 20V, VGS = 0V
Gate-Source Leakage
IGSS
-
-
±1.0
µA
VGS = ±4.5V, VDS = 0V
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
VGS(TH)
0.5
-
0.9
V
VDS = VGS, ID = 250μA
Static Drain-Source On-Resistance
RDS(ON)
-
0.3
0.4
Ω
VGS = 4.5V, ID = 600mA
-
0.4
0.5
VGS = 2.5V, ID = 500mA
-
0.5
0.7
VGS = 1.8V, ID = 350mA
Diode Forward Voltage
VSD
-
0.7
1.2
V
VGS = 0V, IS = 150mA,
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Ciss
-
56
-
pF
VDS =16V, VGS = 0V,
f = 1.0MHz
Output Capacitance
Coss
-
19
-
pF
Reverse Transfer Capacitance
Crss
-
7.3
-
pF
Gate Resistance
Rg
-
86
-
Ω
VDS = 0V, VGS = 0V,
Total Gate Charge (VGS = 4.5V)
Qg
-
0.6
-
nC
VDS = 10V,
ID = 250mA
Total Gate Charge (VGS = 10V)
Qg
-
1.3
-
nC
Gate-Source Charge
Qgs
-
0.1
-
nC
Gate-Drain Charge
Qgd
-
0.16
-
nC
Turn-On Delay Time
tD(ON)
-
5.3
-
ns
VDD = 10V, VGS = 4.5V,
RL = 47Ω, Rg = 10Ω,
ID = 200mA
Turn-On Rise Time
tR
-
2.6
-
ns
Turn-Off Delay Time
tD(OFF)
-
18.1
-
ns
Turn-Off Fall Time
tF
-
6.6
-
ns
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 25mm X 25mm square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.


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